A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

The present disclosure is directed to a process for manufacturing a micro-electro-mechanical system (MEMS) device. The process includes, in part, forming a first sacrificial dielectric region on a semiconductor wafer; forming a structural layer of semiconductor material on the first sacrificial dielectric region; forming a plurality of first openings through the structural layer; forming a second sacrificial dielectric region on the structural layer; forming a ceiling layer of semiconductor material on the second sacrificial dielectric region; forming a plurality of second openings through the ceiling layer; forming on the ceiling layer a permeable layer; selectively removing the first and the second sacrificial dielectric regions; and forming on the permeable layer a sealing layer of semiconductor material.

A microelectromechanical systems (MEMS) sensor, a capacitive MEMS motor sensing circuit and a method are provided. The present application provides a microelectromechanical systems (MEMS) sensor. The MEMS sensor includes a housing having electrical contacts disposed on an exterior of the housing. The MEMS sensor further includes a capacitive MEMS motor disposed in the housing, and an electrical circuit disposed in the housing and being electrically coupled to the electrical contacts. The electrical circuit includes a bias voltage source having an output coupled to an input of the MEMS motor. The electrical circuit further includes a buffer circuit including an amplifier input stage having an input coupled to an output of the MEMS motor. The electrical circuit still further includes a frequency dependent input attenuator including a feedback capacitor and an input attenuator low pass filter, the input attenuator low pass filter having an input coupled to the output of the amplifier input stage and an output coupled to a first terminal of the feedback capacitor, where a second terminal of the feedback capacitor is coupled to the input of the amplifier input stage.

A microelectromechanical device is provided that includes a device layer and first and second comb structures. The bottom of the first comb structure has a z-coordinate that is greater than both the z-coordinate of the bottom face of the device layer and the z-coordinate of the bottom of the second comb structure. The top of the second comb structure has a z-coordinate that is smaller than both the z-coordinate of the top face of the device layer and the z-coordinate of the top of the first comb structure. The device layer also comprises a cavity which extends from the bottom face of the device layer to the bottom of the second comb structure.

An inertial sensor and a method therefor. The inertial sensor includes: a first substrate; a medium layer stacked on the first substrate; a first electric-conductive layer stacked on the medium layer, first openings being formed in the first electric-conductive layer and spaced from one another; second electric-conductive layers being bonded to the first electric-conductive layer through bonding structures, a gap being formed between adjacent second electric-conductive layers, which are connected to each other by a connection part, and second openings being formed in each of the second electric-conductive layers and spaced from one another; and a second substrate covering the first substrate, a closed space being formed between the second substrate and the first substrate. Compared with a traditional single-layer structure, the die size is reduced, the manufacturing cost is reduced, and the integration of device into portable consumer applications is improved, and XY axis sensitivity is improved.