The present invention generally relates to an ovenized platform and a fabrication process thereof. Specifically, the invention relates to an ovenized hybrid Si/SiO.sub.2 platform compatible with typical CMOS and MEMS fabrication processes and methods of its manufacture. Embodiments of the invention may include support arms, CMOS circuitry, temperature sensors, IMUs, and/or heaters among other elements.

Integrated circuit substrates having through silicon vias (TSVs) are described. The TSVs are vias extending through the silicon substrate in which the integrated circuitry is formed. The TSVs may be formed prior to formation of the integrated circuitry on the integrated circuit substrate, allowing the use of via materials which can be fabricated at relatively small sizes. The integrated circuit substrates may be bonded with a substrate having a microelectromechanical systems (MEMS) device. In some such situations, the circuitry of the integrated circuit substrate may face away from the MEMS substrate since the TSVs may provide electrical connection from the circuitry side of the integrated circuit substrate to the MEMS device.

A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance.

The present invention discloses a integrated structure of an MEMS pressure sensor and an MEMS inertia sensor, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate. The integrated structure according to the present invention integrates the MEMS inertia sensor and the MEMS pressure sensor on the same substrate, which may effectively reduce the area of the chip, so as to reduce the cost of the chip. Single packaging may complete the packaging of the entire chip and reduce the cost of the chip packaging.

A micromechanical sensor core for an inertial sensor, having a movable seismic mass, a defined number of anchor elements, by which the seismic mass is fastened on a substrate, a defined number of stop devices fastened on the substrate for stopping the seismic mass, a first springy stop element, a second springy stop element and a solid stop element being developed on the stop device. The stop elements are designed in such a way that the seismic mass is able to strike in succession against the first springy stop element, the second springy stop element and the solid stop element.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device.

An inertial sensor and a method therefor are provided. The inertia sensor includes a first substrate; a first insulation layer stacked on the first substrate; a first conducting layer stacked on the first insulation layer and including first openings; stoppers corresponding to the first openings and embedded into the first openings to close the first openings; a second insulation layer stacked on the first conducting layer and including a cavity; a second conducting layer stacked on the second insulation layer and including second openings; a first bonding structure stacked on the second conducting layer; a second substrate; and a second bonding structure stacked on the second substrate, the second bonding structure and the first bonding structure being bonded together to define a closed space therebetween. Thus, a structure thereof remains stable, thereby minimizing the feature size and bringing more room of device performance improvement.

A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.

A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.