Patent classifications
B81B2201/0264
Micromechanical component for a sensor device and manufacturing method for a micromechanical component for a sensor device
A micromechanical component for a sensor device including a substrate having a substrate surface, at least one stator electrode situated on the substrate surface and/or on the at least one intermediate layer covering at least partially the substrate surface, which is formed in each case from a first semiconductor and/or metal layer, at least one adjustably situated actuator electrode, which is formed in each case from a second semiconductor and/or metal layer, and a diaphragm spanning the at least one stator electrode and the at least one actuator electrode, including a diaphragm exterior side directed away from the at least one stator electrode, which is formed from a third semiconductor and/or metal layer, a stiffening and/or protective structure protruding at the diaphragm exterior side being formed from a fourth semiconductor and/or metal layer.
PRESSURE SENSOR INCLUDING A MICROELECTROMECHANICAL TRANSDUCER AND RELATING PRESSURE-DETECTION METHOD
A pressure sensor including: a structure which delimits a main cavity of a closed type, the structure being at least partially deformable as a function of a pressure external to the structure; and a MEMS device, which is arranged in the main cavity and generates an output signal, which is of an electrical type and is indicative of the pressure inside the main cavity.
SEMICONDUCTOR PRESSURE SENSOR AND MANUFACTURING METHOD OF SEMICONDUCTOR PRESSURE SENSOR
A semiconductor pressure sensor includes: a first silicon substrate including a first recessed part; and a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space. In cross-section, a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and are provided in one of or each of a first end side and a second end side of the first space.
Device, system, method, and computer product for detecting and evaluating environmental quantities and events with modular approach and variable complexity
A system for detecting and evaluating environmental quantities and events is formed by a detection and evaluation device and a mobile phone, connected through a wireless connection. The device is enclosed in a containment casing housing a support carrying a plurality of inertial sensors and environmental sensors. A processing unit is coupled to the inertial sensors and to the environmental sensors. A wireless connection unit, is coupled to the processing unit and a wired connection port, is coupled to the processing unit. A programming connector is coupled to the processing unit and is configured to couple to an external programming unit to receive programming instructions of the processing unit. A storage structure is coupled to the processing unit and a power-supply unit supplied power in the detection and evaluation device. The mobile phone stores an application, which enables a basicuse mode, an expert use mode, and an advanced use mode.
Fabrication Method of MEMS Transducer Element
A method of fabricating a plurality of individual microelectromechanical transducer elements includes forming a plurality of microelectromechanical transducer elements on a wafer. Each microelectromechanical transducer element has a sensitive region with a membrane and a sensing element monitoring at least one measurand and generating an electrical signal correlated with the at least one measurand, and an electrical contact outputting the electrical signal. The method includes providing, for each microelectromechanical transducer element, a sealing structure around a sensitive region and an electrical connection connected to the electrical contact. The sealing structure and the electrical connection are made out of a reflow solder material. The method includes dicing the wafer to form individual microelectromechanical transducer elements.
PRESSURE SENSOR STRUCTURE, PRESSURE SENSOR DEVICE, AND METHOD OF MANUFACTURING PRESSURE SENSOR STRUCTURE
A pressure sensor structure includes a sensor body including a diaphragm plate that functions as a sense electrode, a base electrode that faces the diaphragm plate, and a sidewall layer maintaining a gap between the diaphragm plate and the base electrode, and a conductive guard substrate to support the sensor body. The sidewall layer includes a guard electrode layer and upper and lower electrically insulating layers to electrically insulate the guard electrode layer. An electrically insulating layer is between the guard substrate and the sensor body to electrically insulate the guard substrate. The guard substrate is electrically connected to the guard electrode layer to function as a guard electrode together with the guard electrode layer.
Particle filter for MEMS device
Various embodiments of the present disclosure are directed towards a method for manufacturing a microelectromechanical systems (MEMS) device. The method includes forming a particle filter layer over a carrier substrate. The particle filter layer is patterned while the particle filter layer is disposed on the carrier substrate to define a particle filter in the particle filter layer. A MEMS substrate is bonded to the carrier substrate. A MEMS structure is formed over the MEMS substrate.
MEMS sensor
A MEMS sensor includes a silicon substrate that has a first surface and a second surface on a side opposite to the first surface and that has a cavity in the first surface, a silicon diaphragm that has a first surface and a second surface on aside opposite to the first surface and in which the second surface is joined directly to the first surface of the silicon substrate, and a piezoresistance formed at the first surface of the silicon diaphragm, and, in the MEMS sensor, a plane orientation of the first surface of the silicon substrate and a plane orientation of the first surface of the silicon diaphragm differ from each other.
Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor
Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.
Wearable device with fluid-based circuits and stretch-sensitive materials, and systems including the wearable device used in conjunction with a virtual-reality headset
A method for large scale integration of haptic devices is described. The method comprises forming a first elastomer layer of a large scale integration (LSI) device on a substrate according to a specified manufacturing process, the first elastomer layer having a plurality of fluid based circuits, the first elastomer layer adhering to a plurality of formation specifications. The method further comprises curing the first elastomer layer. Additionally, one or more additional elastomer layers of the LSI device are formed with the first elastomer layer according to the specified manufacturing process, the one or more additional elastomer layers having a plurality of fluid based circuits, the one or more additional elastomer layers adhering to the plurality of formation specifications.