A MEMS device, e.g., a flexible MEMS pressure sensor, is formed by disposing a sacrificial layer, such as photoresist, on a substrate. A first flexible support layer is disposed on the substrate, and a first conductive layer is disposed over a portion of the first support layer. A liquid or gel separator, e.g., silicone oil, is disposed on an internal region of the first conductive layer. A second flexible support layer encapsulates the first conductive layer and the separator. A second conductive layer disposed over the second support layer at least partially overlaps the first conductive layer and forms a parallel plate capacitor. A third flexible support layer encapsulates the second conductive layer and second support layer. Soaking the sensor in hot water releases the sensor from the sacrificial layer.

A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.

A semiconductor sensor device is assembled using a lead frame having a flag surrounded by lead fingers. A pressure sensor die is mounted on the flag and electrically connected to the leads. Prior to encapsulation, a pre-formed block of gel material is placed over the sensor region on the die. Encapsulation is performed and mold compound covers the pressure sensor die and the bond wires. Mold compound covering the gel block may be removed. Additionally, a trench may be formed around an upper portion of the gel block so that the lateral sides of the gel block are at least partially exposed.

In a microelectromechanical system (MEMS) pressure sensor, thin and fragile bond wires that are used in the prior art to connect a MEMS pressure sensing element to an application specific integrated circuit (ASIC) for the input and output signals between these two chips are replaced by stacking the ASIC on the MEMS pressure sensing element and connecting each other using conductive vias formed in the ASIC. Gel used to protect the bond wires, ASIC and MEMS pressure sensing element can be eliminated if bond wires are no longer used. Stacking the ASIC on the MEMS pressure sensing element and connecting them using conductive vias enables a reduction in the size and cost of a housing in which the devices are placed and protected.

The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.

A semiconductor device includes a substrate. A first semiconductor die including a microelectromechanical system (MEMS) is disposed over the substrate. A lid is disposed on the substrate around the first semiconductor die. A first encapsulant is deposited over the substrate and lid. A second encapsulant is deposited into the lid.

A structure for fixing a membrane to a carrier including a carrier; a suspended structure; and a holding structure with a rounded concave shape which is configured to fix the suspended structure to the carrier and where a tapered side of the holding structure physically connects to the suspended structure is disclosed. A method of forming the holding structure on a carrier to support a suspended structure is further disclosed. The method may include: forming a holding structure on a carrier; forming a suspended structure on the holding structure; shaping the holding structure such that it has a concave shape; and arranging the holding structure such that a tapered side of the holding structure physically connects to the suspended structure.

A surface mounting device has one body of semiconductor material such as an ASIC, and a package surrounding the body. The package has a base region carrying the body, a cap and contact terminals. The base region has a Young's modulus lower than 5 MPa. For forming the device, the body is attached to a supporting frame including contact terminals and a die pad, separated by cavities; bonding wires are soldered to the body and to the contact terminals; an elastic material is molded so as to surround at least in part lateral sides of the body, fill the cavities of the supporting frame and cover the ends of the bonding wires on the contact terminals; and a cap is fixed to the base region. The die pad is then etched away.

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.