Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.

A semiconductor pressure sensor device in which the shape or the structure of a connector portion can be easily changed and which has high waterproof performance. A terminal housing and a second case are engaged with each other via an engagement structure. The terminal housing and a first case are fitted with each other via a fitting structure. Thus, the first case and the second case are fixed to each other via the terminal housing. The first case is fitted in the second case. Then, the terminal housing is fitted with the first case, and the terminal housing is engaged with the second case substantially at the same time. Through such simple process, an opening portion of the first case is covered and a connector portion configured to enable external terminals to be connected to ends, located on one side, of a plurality of lead terminals is formed.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

The present disclosure provides a pressure sensor, including a chamber and a film. The chamber includes a first wall with a first electrode and a second wall with a second electrode. The first wall faces the second wall, and the first electrode and the second electrode respectively include conductive or semiconductive material. The film lines a surface inside the chamber exclusive of the first electrode and the second electrode for blocking outgassing entering the chamber from the surface. A method of manufacturing the pressure sensor is also disclosed.

A multi-device module, comprising: a first substrate, which houses a first MEMS transducer, designed to transduce a first environmental quantity into a first electrical signal, and an integrated circuit, coupled to the first MEMS transducer for receiving the first electrical signal; a second substrate, which houses a second MEMS transducer, designed to transduce a second environmental quantity into a second electrical signal; and a flexible printed circuit, mechanically connected to the first and second substrates and electrically coupled to the integrated circuit and to the second MEMS transducer so that the second electrical signal flows, in use, from the second MEMS transducer to the integrated circuit.

A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.

An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.

A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.

A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.