The present invention discloses a micro-electro-mechanical system silicon on insulator (MEMS SOI) pressure sensor and a method for preparing the same. The pressure sensor includes a bulk silicon layer, a buried oxide layer, a substrate, a varistor, a passivation layer, and an electrode layer. The varistor is obtained by means of photolithography and ion implantation on a device layer of an SOI wafer. The passivation layer is SiO.sub.2 formed by means of annealing treatment on the SOI wafer. An annealing atmosphere is one of pure O.sub.2, a gas mixture of O.sub.2/H.sub.2O, a gas mixture of O.sub.2/NO, a gas mixture of O.sub.2/HCl, and a gas mixture of O.sub.2/CHF.sub.3. By means of the annealing treatment, the damage to a surface of the buried oxide layer as a result of over-etching during formation of the varistor by means of photolithography is eliminated and the unstability of the sensor caused by body and interface defects of the passivation layer and trapped charges thereof is resolved. A trench is formed at the buried oxide layer and the bulk silicon layer directly below the varistor, which helps overcome defects as a result of doped impurities entering the buried oxide layer below the varistor, and helps improve the sensitivity of the sensor.

The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.

The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate.

The present invention discloses a Micro-Electro-Mechanical System (MEMS) acoustic pressure sensor device and a method for making same. The MEMS device includes: a substrate; a fixed electrode provided on the substrate; and a multilayer structure, which includes multiple metal layers and multiple metal plugs, wherein the multiple metal layers are connected by the multiple metal plugs. A cavity is formed between the multilayer structure and the fixed electrode. Each metal layer in the multilayer structure includes multiple metal sections. The multiple metal sections of one metal layer and those of at least another metal layer are staggered to form a substantially blanket surface as viewed from a moving direction of an acoustic wave.

A device member including a cavity, includes a base member, an interlayer, an upper layer, an opening portion, and a gas-permeable sealing layer. The base member includes a first semiconductor. The interlayer is formed on the base member and is non-conductive. The upper layer is formed on the interlayer and includes a second semiconductor. The opening portion is formed at the upper layer. The gas-permeable sealing layer is formed to seal the opening portion formed at the upper layer. The cavity is formed by removing the interlayer with an etching gas that penetrates through the sealing layer.

In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced. Alternatively/additionally, the material of the conductive layer in the region underneath this bond pad is replaced by electrically conductive material at least in the upper layer region, so that the insulation layer in the region of this bond pad is considerably thicker than outside the bond pad region.

A sensor has an electronic chip and a sensor chip which are arranged within a functional volume which is at the most 4-5 mm long, a maximum 2-3 mm wide, and the maximum height is 0.5-0.8 mm, thereby potentially providing a compact sensor.

A sensor package substrate has through holes V1 and V2 at a position overlapping a sensor chip mounting area. The through hole V1 has a minimum inner diameter at a depth position D1, and the through hole V2 has a minimum inner diameter at a depth position D2 different from the depth position D1. Thus, since the plurality of through holes are formed at a position overlapping the sensor chip mounting area, the diameter of each of the through holes can be reduced. This makes foreign matters unlikely to enter through the through holes, and a reduction in the strength of the substrate is suppressed. In addition, since the depth position D1 and depth position D2 are located at different depth levels, it is possible to sufficiently maintain the strength of a part of the substrate that is positioned between the through holes V1 and V2.

The application describes MEMS transducers having a vent structure provided in a flexible membrane of the vent structure The vent structure comprises at least one moveable portion and the vent structure is configured such that, in response to a differential pressure across the vent structure, the moveable portion is rotatable about first and second axes of rotation, which axes of rotation extend in the plane of the membrane.