An electromechanical microsystem including an electromechanical transducer, a deformable diaphragm and a cavity hermetically containing a deformable medium keeping a constant volume under the action of an external pressure change. The deformable diaphragm forms a wall of the cavity and has at least one free area so as to be elastically deformed. The electromechanical transducer is configured so that its movement depends on the change in the external pressure, and vice versa. The free area cooperates with an external member so that its deformation induces, or is induced by, a movement of the external member. Thus, the electromechanical microsystem is adapted to displace the external member or to detect a movement of this member, the electromechanical microsystem includes at least one pin, configured to bear on a peripheral portion of the free area so that a deformation of the free rea causes an inclination of the pin.

A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

An integrated structure of a MEMS microphone and an air pressure sensor, and a fabrication method for the integrated structure, the structure including a base substrate; a vibrating membrane, back electrode, upper electrode, and lower electrode formed on the base substrate, as well as a sacrificial layer formed between the vibrating membrane and the back electrode and between the upper electrode and the lower electrode; a first integrated circuit electrically connected to the vibrating membrane and the back electrode respectively; and a second integrated circuit electrically connected to the lower electrode and the upper electrode respectively, wherein a region of the base substrate corresponding to the vibrating membrane is provided with a back cavity; the sacrificial layer between the vibrating membrane and the back electrode is hollowed out to from a vibrating space that communicates with the exterior of the integrated structure, and the sacrificial layer between the upper electrode and the lower electrode is hollowed out to form a closed space; and the integrated circuits are formed on a chip, thereby reducing the interference of connection lines on the performance of a microphone, reducing the introduction of noise, reducing the size of a product and reducing power consumption.

A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

A diaphragm-based sensor includes a deflectable diaphragm, a base layer opposite the diaphragm, and a corrugated wall extending between the diaphragm and the base layer. The diaphragm is suspended over a cavity enclosed by the diaphragm, the base layer and the corrugated wall. The diaphragm includes a first electrode and the base layer includes a second electrode such that a capacitance between the first and second electrodes changes when the diaphragm is deflected relative to the cavity.

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

A no-gel sensor package is disclosed. In one embodiment, the package includes a microelectromechanical system (MEMS) die having a first substrate, which in turn includes a first surface on which is formed a MEMS device. The package also includes a polymer ring with an inner wall extending between first and second oppositely facing surfaces. The first surface of the polymer ring is bonded to the first surface of the first substrate to define a first cavity in which the MEMS device is contained. A molded compound body having a second cavity that is concentric with the first cavity, enables fluid communication between the MEMS device and an environment external to the package.

A no-gel sensor package is disclosed. In one embodiment, the package includes a microelectromechanical system (MEMS) die having a first substrate, which in turn includes a first surface on which is formed a MEMS device. The package also includes a polymer ring with an inner wall extending between first and second oppositely facing surfaces. The first surface of the polymer ring is bonded to the first surface of the first substrate to define a first cavity in which the MEMS device is contained. A molded compound body having a second cavity that is concentric with the first cavity, enables fluid communication between the MEMS device and an environment external to the package.

In an embodiment, a method for manufacturing a micro-electro-mechanical systems (MEMS) transducer device includes providing a substrate body with a surface, depositing an etch-stop layer (ESL) on the surface, depositing a sacrificial layer on the ESL, depositing a diaphragm layer on the sacrificial layer and removing the sacrificial layer, wherein depositing the sacrificial layer includes depositing a first sub-layer of a first material and depositing a second sub-layer of a second material, and wherein the first material and the second material are different materials.

A pressure sensing element, including a substrate, a device layer coupled to the substrate, a diaphragm being part of the device layer, and a plurality of piezoresistors coupled to the diaphragm. A plurality of bond pads is disposed on the device layer, and an electrical field shield is bonded to the top of device layer and at least one of the bond pads. At least one stress adjustor is part of the electrical field shield, where the stress adjustor is a cut-out constructed and arranged to reduce thermal hysteresis of the pressure sensing element caused by stress relaxation of the electrical field shield during a cooling and heating cycle. The stress adjustor may be a thin film deposited on top of the electrical field shield, which may apply residual stress to the piezoresistors. The pressure sensing element may include a cavity integrally formed as part of the substrate.