B81B2201/0271

MEMS FOR HIGHLY EFFICIENT INTERACTION WITH A VOLUME FLOW

An MEMS having a layered structure includes a cavity disposed in the layered structure and fluidically coupled to an external environment of the layered structure through at least one opening in the layered structure. The MEMS includes an interaction structure movably disposed in a first MEMS plane and in the cavity along a plane direction and configured to interact with a fluid in the cavity, wherein movement of the interaction structure is causally related to movement of the fluid through the at least one opening. The MEMS further includes an active structure disposed in a second MEMS perpendicular to the plane direction, the active structure mechanically coupled to the insulation structure and configured such that an electrical signal at an electrical contact of the active structure is causally related to a deformation of the active structure, wherein the deformation of the active structure is causally related to movement of the fluid.

INTEGRATED MEMS RESONATOR AND METHOD

An electronic device and associated methods are disclosed. In one example, the electronic device includes a MEMS die located within a substrate, and below a processor die. In selected examples, the MEMS die includes a resonator. Example methods of forming MEMS resonator devices are also shown.

CMUT TRANSDUCER WITH MOTION-STOPPING STRUCTURE AND CMUT TRANSDUCER FORMING METHOD
20220340410 · 2022-10-27 ·

The present disclosure relates to a CUT transducer (200) comprising: —a conductive or semiconductor substrate (201) coated with a stack of one or a plurality of dielectric layers (203, 213); —a cavity (205, 215) formed in said stack; —a conductive or semiconductor membrane (221) suspended above the cavity; —at the bottom of the cavity, a conductive region (209) in contact with the upper surface of the substrate, said conductive region being interrupted on a portion of the upper surface of the substrate; and—in the cavity, a stop structure (207) made of a dielectric material localized on or above the area of interruption of the conductive region (209).

WAFER LEVEL PROCESSING FOR MICROELECTRONIC DEVICE PACKAGE WITH CAVITY
20230092132 · 2023-03-23 ·

A described example includes: a MEMS component on a device side surface of a first semiconductor substrate; a second semiconductor substrate bonded to the device side surface of the first semiconductor substrate by a first seal patterned to form sidewalls that surround the MEMS component; a third semiconductor substrate having a second seal extending from a surface and bonded to the backside surface of the first semiconductor substrate by the second seal, the second seal forming sidewalls of a gap beneath the MEMS component. A trench extends through the first semiconductor substrate and at least partially surrounds the MEMS component. The third semiconductor substrate is mounted on a package substrate. A bond wire or ribbon bond couples the bond pad to a conductive lead on the package substrate; and mold compound covers the MEMS component, the bond wire, and a portion of the package substrate.

MEMS DEVICE AND METHOD FOR MAKING THE SAME

A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
20220340408 · 2022-10-27 ·

A semiconductor structure includes a substrate, a MEMS substrate, a dielectric structure between the substrate and the MEMS substrate, a cavity in the dielectric structure, an electrode over the substrate, and a protrusion disposed in the cavity. The MEMS substrate includes a movable membrane, and the cavity is sealed by the movable membrane. A height of the protrusion is less than a depth of the cavity.

Thermal flux sensor with heating nanofilaments

A heat flux sensor comprising: an array of nanofilaments suspended with respect to a support, each nanofilament comprising an electrically conducting material, the array being able to be biased by an electric power source to circulate an electric current in each of the nanofilaments, at least one resonator of the nanoelectro-mechanical system (NEMS) type comprising: a beam consisting of a nanofilament forming a side of the array, an actuation device able to generate a vibration of the beam under the effect of an excitation signal, a detection device configured to measure a displacement of the beam during the vibration and emit an output signal having a resonance at the resonant frequency of the resonator, the resonant frequency depending on the intensity of the electric current flowing through the beam, a temperature variation of the array of heating nanofilaments induced by a variation in a characteristic of a fluid surrounding the array causing an intensity variation of the current flowing through the beam resulting in a variation in the resonant frequency of the resonator.

Microelectromechanical Devices For Higher Order Passive Temperature Compensation and Methods of Designing Thereof
20230131902 · 2023-04-27 ·

An example silicon MEMS resonator device includes a support structure, a resonator element with at least one associated eigenmode of vibration, at least one anchor coupling the resonator element to the support structure, at least one driving electrode, and at least one sense electrode. The resonator element is homogeneously doped with N-type or P-type dopants to a doping concentration that causes a closely temperature-compensated mode in which (i) an absolute value of a first order temperature coefficient of frequency of the resonator element is reduced to a first value below a threshold value and (ii) an absolute value of a second order temperature coefficient of frequency of the resonator element is reduced to about zero. Further, a geometry of the resonator element is chosen such that the absolute value of the first order temperature coefficient of frequency is further reduced to a second value smaller than the first value.

MULTI-TRANSDUCER CHIP ULTRASOUND DEVICE
20230125688 · 2023-04-27 ·

An ultrasound device for use with various types of imaging. In some embodiments, the ultrasound device may comprise a circuitry substrate and a plurality of transducer chips coupled to the circuitry substrate. In some embodiments, each transducer chip may comprise a microelectromechanical systems (MEMS) component that may include a plurality of ultrasound elements closely packed with one another, an Application-Specific Integrated Circuit (ASIC) that may be operatively coupled to the plurality of ultrasound elements of said MEMS component, and a control unit that may be electrically coupled to each ASIC of the plurality of transducer chips for control thereof. In some embodiments, at least two transducer chips of the plurality of transducer chips may be placed on the circuitry substrate with a separation distance that may be less than an operational wavelength of the ultrasound elements of the MEMS components of said at least two transducer chips.

MEMS device manufacturing method and mems device
11597648 · 2023-03-07 · ·

A MEMS device and a MEMS device manufacturing method are provided for suppressing damage to device parts. An exemplary method of manufacturing a resonance device includes radiating laser light from a bottom surface side of a second substrate to form modified regions inside the second substrate along dividing lines of a first substrate, which has device parts formed on a top surface thereof, and the second substrate, the top surface of which is bonded to the bottom surface of the first substrate via bonding portions. The method further includes dividing the first and second substrates along the dividing lines by applying stress to the modified regions. The bonding portions are formed along the dividing lines and block the laser light.