A sensor, such as a piezoelectric MEMS vibration sensor, includes a frame, a beam array comprising a plurality of beams, and a plurality of masses. Each beam of the plurality of beams has an anchored end and an unanchored end, with each beam being coupled to the frame at the anchored end. The unanchored end of each beam is coupled to a respective mass of the plurality of masses. Each beam of the plurality of beams can be configured to minimize a variation in a voltage output for a limited frequency range. In some implementations, the resonant frequency of each beam corresponds to a sensitivity peak in a limited frequency range.

Disclosed are a vibration sensor, an electronic device and a vibration detection method. The vibration sensor comprises a circuit board assembly, a housing, a chip assembly, a vibration-pickup assembly and a through-hole. A back cavity is formed inside the circuit board assembly, the housing is mounted over the circuit board assembly, and the chip assembly is provided on a side of the circuit board assembly proximate to the housing and is electrically connected to the circuit board assembly. The vibration-pickup assembly is provided inside the cavity and dividing the cavity into a first cavity and a second cavity. The through-hole of the vibration sensor may be in communication with the back cavity and the second cavity.

The present disclosure relates to a piezoelectric single-crystal element, a MEMS device using same, and a method for manufacturing same, wherein the piezoelectric single-crystal element includes a wafer, a lower electrode stacked on the wafer, a piezoelectric single-crystal thin film stacked on the lower electrode, and an upper electrode stacked on the piezoelectric single-crystal thin film, wherein the piezoelectric single-crystal thin film is composed of PMN-PT, PIN-PMN-PT or Mn:PIN-PMN-PT, and the piezoelectric single-crystal thin film has a polarization direction set to a <001> axis, a <011> axis or a <111> axis, and a MEMS device using same.

A micro-electromechanical system (1) comprising: a sensor device (2), with a measuring deformer (3) exhibiting an effective temperature T1; a high-frequency resonator (4) that is mechanically coupled to the sensor device (2) and can interact with the measuring deformer (3); an energy converter (7) that is operatively connected to the high-frequency resonator (4) and is configured to excite the high-frequency resonator (4) into a vibration state, wherein, through the interaction of the vibrating high-frequency resonator (4) with the measuring deformer (3), energy can be transferred from the measuring deformer (3) to the high-frequency resonator (4) in such a manner that the measuring deformer (3) after the energy transfer exhibits an effective temperature T2 lower than T1.

A method for manufacturing a vibratory mechanical inertial sensor, sensor obtained by such a method and inertial unit including such a sensor The invention relates to a method for manufacturing a vibratory inertial sensor (1), comprising a step of associating a test body (3) with a base (2), a step of assembling a cover (100) to said base (2) to form a casing within which said test body (3) is housed, a step of vacuuming said casing or filling the latter with a dry gas, and a step of magnetically shielding said casing that includes a first operation of depositing, by galvanoplasty, a first layer of a first ferromagnetic material on part at least of said casing. Vibratory inertial sensors

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.