A button device includes a MEMS sensor having a MEMS strain detection structure and a deformable substrate configured to undergo deformation under the action of an external force. The MEMS strain detection structure includes a mobile element carried by the deformable substrate via at least a first and a second anchorage, the latter fixed with respect to the deformable substrate and configured to displace and generate a deformation force on the mobile element in the presence of the external force; and stator elements capacitively coupled to the mobile element. The deformation of the mobile element causes a capacitance variation between the mobile element and the stator elements. Furthermore, the MEMS sensor is configured to generate detection signals correlated to the capacitance variation.

Sensors, systems, and methods for monitoring environmental conditions, such as physical, electromagnetic, thermal, and/or chemical parameters within an environment, over extended periods of time with the use of one or more electromechanical sensing devices and electronic circuitry for processing an output of the sensing devices. The sensing devices each include a cantilevered structure and at least one contact configured for contact-mode operation with the cantilevered structure in response to the cantilevered structure deflecting toward or away from the contact when exposed to the parameter of interest. The cantilevered structure has at least first and second beams of dissimilar materials, at least one of which has at least one property that changes as a result of exposure to the parameter.

Microelectromechanical sensor with an out-of-plane detection has a cross sensitivity in a first direction in the plane with a value of S.sub.T, the sensor comprising a support, a mass suspended from the support by beams stressed by bending, in such a way that the inertial mass is capable of moving with respect to the support about an axis of rotation contained in a plane of the sensor, a stress gauge suspended between the mass and the support. The bending beams have a dimension t.sub.f in the out-of-plane direction and the mass has a dimension t.sub.M in the out-of-plane direction such that $t_f=\frac{3}{4}\left(t_M-2l_{\mathrm{arm}}{S}_T\right).$
L.sub.arm is the distance between the centre of gravity of the mass and the centre of the bending beams projected onto the first direction.

A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO.sub.2-patterned portion, and a second Pt-patterned portion on the second TiO.sub.2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO.sub.2 layer formed on the IMD layer, a first TiO.sub.2-patterned portion and a first Pt-patterned portion.

A semiconductor device may include a first substrate, a first electrical component, a lid, a second substrate, and a second electrical component. The first substrate may include an upper surface, a lower surface, and an upper cavity in the upper surface. The first electrical component may reside in the upper cavity of the first substrate. The lid may cover the upper cavity and may include a port that permits fluid to flow between an environment external to the semiconductor device and the upper cavity. The second substrate may include the second electrical component mounted to an upper surface of the second substrate. The lower surface of the first substrate and the upper surface of the second substrate may fluidically seal the second electrical component from the upper cavity.

A microelectromechanical (MEMS) device may be coupled to a dielectric material at an upper planar surface or lower planar surface of the MEMS device. One or more temperature sensors may be attached to the dielectric material layer. Signals from the one or more temperature sensors may be used to determine a thermal gradient along on axis that is normal to the upper planar surface and the lower planar surface. The thermal gradient may be used to compensate for values measured by the MEMS device.

According to one embodiment, a sensor includes a base body, a first structure body, and a second structure body. The first structure body includes a first fixed portion, a first conductive portion, and first electrodes. The first fixed portion is fixed to the base body. The first conductive portion is held by the first fixed portion. The first conductive portion is separated from the base body in a first direction. The first electrodes are held by the first conductive portion. A distance between the base body and the first electrodes is changeable. The second structure body includes a second conductive portion and second electrodes. The second conductive portion is fixed to the base body. The second electrodes are held by the second conductive portion. One of the second electrodes is between the one of the first electrodes and the other one of the first electrodes.

A device includes: a micromechanical sensing structure configured to provide an electrical detection quantity as a function of a load; and a package enclosing the micromechanical sensing structure and providing a mechanical and electrical interface with respect to an external environment. The package includes a housing structure defining a cavity housing the micromechanical sensing structure; and a package coating that coats, at least in part, the housing structure, the package coating including a mechanical interface configured to transfer, in a uniform manner, the load on the housing structure and on the micromechanical sensing structure, wherein the housing structure includes a deformable layer interposed and in contact between the micromechanical sensing structure and the package coating, and wherein the deformable layer defines a mechanical-coupling interface.

A transducer modulus, comprising: a substrate; a cap on the substrate, defining a chamber; and a sensor modulus in the chamber, integrating a first MEMS transducer facing the chamber, and a second MEMS transducer facing the supporting substrate. The cap has a first opening that forms a path for access of the first environmental quantity exclusively towards a sensitive element of the first transducer, and the supporting substrate has a second opening that forms a path for access of the second environmental quantity exclusively towards a sensitive element of the second transducer.

A large aperture CMUT transducer array is formed of a plurality of adjacently located tiles of CMUT cells. The adjacent edges of the tiles are formed by an anisotropic etch process, preferably a deep reactive ion etching process which is capable of cutting through the die and its substrate while maintaining vertical edges in close proximity to the CMUT cells at the edge of the tile. This enables the CMUT cells of continuous rows or columns to exhibit a constant pitch over multiple CMUT cell tiles. The tiles also contain interconnect electrodes along an edge for making electrical connections to the tiles with flex circuit.