A sensor unit includes a transducer element monitoring a measurand and generating an electrical output signal correlated with the measurand, a sensor substrate having a first surface and an opposite second surface, a recess extending from the first surface of the substrate through to the second surface of the substrate, and a circuit carrier. The transducer element and a first electrically conductive contact pad are arranged on the first surface and electrically connected. The circuit carrier has a second electrically conductive contact pad. The sensor substrate is mounted on the circuit carrier with the first surface facing the circuit carrier. The first electrically conductive contact pad and the second electrically conductive contact pad are interconnected by an electrically conductive material filled in from the second surface towards the first surface of the sensor substrate.

A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO.sub.2-patterned portion, and a second Pt-patterned portion on the second TiO.sub.2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO.sub.2 layer formed on the IMD layer, a first TiO.sub.2-patterned portion and a first Pt-patterned portion.

The invention relates to a method of fabricating a micro machined channel, comprising the steps of providing a substrate of a first material and having a buried layer of a different material therein, and forming at least two trenches in said substrate by removing at least part of said substrate. Said trenches are provided at a distance from each other and at least partly extend substantially parallel to each other, as well as towards said buried layer. The method comprises the step of forming at least two filled trenches by providing a second material different from said first material and filling said at least two trenches with at least said second material; forming an elongated cavity in between said filled trenches by removing at least part of said substrate extending between said filled trenches; and forming an enclosed channel by providing a layer of material in said cavity and enclosing said cavity.

An inclination sensor system for a mobile work machine includes a MEMS inclination sensor and a further inclination sensor of a different type and a fusion device. The inclination sensor is configured to output a first inclination signal on the basis of an inclination that exists at the inclination sensor. The further inclination sensor is configured to output a second inclination signal on the basis of the inclination that exists at the further inclination sensor. The fusion device is configured to calculate a corrected inclination signal on the basis of the first and second inclination signals and to output same as the corrected inclination signal.

The present invention discloses a coating monitoring system of wind turbines, comprising a monitoring object having at least one coating on the surface. A coating monitoring module is coupled to the monitoring object, and the coating monitoring module comprises a MEMS system including a signal generating device, and a printed circuit board connected to the MEMS system. The coating monitoring module measures a measured coating impedance value of the monitoring object. A potentiostat, calculating an actual coating impedance value of the monitoring object, is connected to the monitoring object. And a computing device coupled to the coating monitoring module, the computing device correcting the measured coating impedance value based on the actual coating impedance value.

Examples provided herein are associated with a molded lead frame of a sensor package. An example sensor package may include a molded lead frame that includes an opening in the molded lead frame, wherein the opening extends from a mount-side of the molded lead frame to a chip-side of the molded lead frame, wherein the chip-side of the molded lead frame is opposite the mount-side; and a sensor mounted to the chip-side of the molded lead frame.

The present disclosure, in some embodiments, relates to a method for manufacturing a MEMS apparatus. The method may be performed by forming an anti-stiction layer on one or more respective surfaces of a handle substrate and a MEMS substrate. The anti-stiction layer is patterned, therein defining a patterned anti-stiction layer that uncovers one or more predetermined locations associated with a bonding of the handle substrate to the MEMS substrate. The handle substrate is bonded to the MEMS substrate at the one or more predetermined locations.

A semiconductor device package includes a carrier; a sensor element disposed on or within the carrier; a cover disposed above the carrier and comprising a top surface, a bottom surface and an inner sidewall, the inner sidewall defining a penetrating hole extending from the top surface to the bottom surface; and a light transmissive element covering the penetrating hole, wherein the sensor element senses or detects light passing through the light transmissive element.

A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.