Ultrasonic sensing approaches are described with integrated MEMS-CMOS implementations. Embodiments include ultrasonic sensor arrays for which PMUT structures of individual detector elements are at least partially integrated into the CMOS ASIC wafer. MEMS heating elements are integrated with the PMUT structures by integrating under the PMUT structures in the CMOS wafer and/or over the PMUT structures (e.g., in the protective layer). For example, embodiments can avoid wafer bonding and can reduce other post processing involved with conventional manufacturing of PMUT ultrasonic sensors, while also improving thermal response.

A packaged environmental sensor includes a supporting structure and a sensor die, which incorporates an environmental sensor and is arranged on a first side of the supporting structure. A control chip is coupled to the sensor die and is arranged on a second side of the supporting structure opposite to the first side. A lid is bonded to the first side of the supporting structure and is open towards the outside in a direction opposite to the supporting structure. The sensor die is housed within the lid.

According to one embodiment, a hydrogen sensor is disclosed. The hydrogen sensor includes a capacitor, a gas detector, a heater, and a determiner. The capacitor includes a deformable member that deforms by absorbing or adsorbing hydrogen and varies a capacitance value corresponding to a deformation of the deformable member. The gas detector detects gas based on a capacitance value of the capacitor. The heater heats the deformable member. The determiner determines whether gas detected by the gas detector contains a substance other than hydrogen or not, wherein the gas detector detects the gas during a heating period during which the heater heats the deformable member.

A sensing element having improved temperature and pressure characteristics including at least one acoustic sensing device formed mainly from a silicon substrate and having a microelectromechanical system without the use of quartz or polymer, wherein the at least one acoustic sensing device detects a torque associated with a metal object subject to said torque, and a high temperature bonding surface for directly connecting the sensing element to the metal object via a high temperature connecting processes comprising at least one of soldering, metalizing and/or brazing, without the need for a polymer adhesive. Related sensors using such sensing elements and methods are also disclosed herein.

The present invention features a stretchable strain sensor for detecting minute amounts of strain or pressure. The stretchable strain sensor may comprise a first soft polymer layer, a wrinkled conductive layer disposed on the first soft polymer layer, and a second soft polymer layer disposed on the wrinkled conductive layer. Strain applied to the sensor may cause the wrinkled conductive layer to stretch and crack and send a signal based on resistance. Pressure applied to the sensor may cause the wrinkled conductive layer to deform and crack and send a signal based on resistance. The stretchable strain sensor may be capable of measuring contractions of a tissue, detecting fluid flowing through a microfluidic channel, and detecting whether a microfluidic valve is closed or not.

A microelectromechanical (MEMS) device may be coupled to a dielectric material at an upper planar surface or lower planar surface of the MEMS device. One or more temperature sensors may be attached to the dielectric material layer. Signals from the one or more temperature sensors may be used to determine a thermal gradient along on axis that is normal to the upper planar surface and the lower planar surface. The thermal gradient may be used to compensate for values measured by the MEMS device.

A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

A microphone with a combined packaging structure includes: a substrate, a first cover being provided on top of the substrate, the substrate, together with the first cover, forms a first accommodating cavity, an acoustic sensor being provided inside the first accommodating cavity, and an acoustic through-hole being formed in the first accommodating cavity. A second cover is provided on a back face of the substrate, the second cover, together with the substrate, forms a second accommodating cavity, and a proximity sensor is arranged inside the second accommodating cavity. By adopting the above-mentioned technical solutions, the present invention has the beneficial effects that two accommodating cavities are respectively provided on the top and bottom of the substrate in the microphone according to the present invention, for receiving components of a MEMS microphone and the components of a proximity sensor respectively.

A MEMS sensor with a media access opening in its carrier board. The MEMS sensor has an integrally filter mesh closing the media access opening. The mesh can be applied in unstructured form over the whole surface of the carrier board. Then, a structuring is performed to produce preferably at the same time a perforation forming the filter mesh.

A method of manufacturing a dielectric barrier discharge (DBD) structure includes forming a patterned electrode layer around an outer perimeter of a substrate composed of a dielectric material. The patterned electrode layer includes multiple electrodes around the outer perimeter of the substrate and gaps between adjacent electrodes. The method further includes depositing a dielectric layer over at least a first region of the patterned electrode layer to form a DBD region of the DBD structure.