A capacitive sensor includes a first conductive structure; a second conductive structure movable relative to the first conductive structure in response to an external force acting thereon, wherein the first and the second conductive structures form a first capacitor having a first capacitance that changes with a change in a distance between the first conductive structure and second conductive structure, wherein the first capacitance is representative of the external force; and a diagnostic circuit configured to detect a first leakage current in the capacitive sensor by measuring an first electrical parameter that is affected by the first leakage current and comparing the measured first electrical parameter to a first predetermined error threshold, wherein the diagnostic circuit is further configured to generate a first error signal in response to the measured first electrical parameter being greater than the first predetermined error threshold.

An apparatus for calculating a thermal conductivity of a gaseous substance is provided. The apparatus includes a substrate; a cover member disposed on the substrate, wherein the cover member comprises a flow tunnel for the gaseous substance; a flow sensing element disposed on the substrate, wherein the flow sensing element is exposed to the gaseous substance in the flow tunnel; and a pressure sensing element disposed on the substrate, wherein the pressure sensing element is exposed to the gaseous substance in the flow tunnel.

Ultrasonic sensing approaches are described with integrated MEMS-CMOS implementations. Embodiments include ultrasonic sensor arrays for which PMUT structures of individual detector elements are at least partially integrated into the CMOS ASIC wafer. MEMS heating elements are integrated with the PMUT structures by integrating under the PMUT structures in the CMOS wafer and/or over the PMUT structures (e.g., in the protective layer). For example, embodiments can avoid wafer bonding and can reduce other post processing involved with conventional manufacturing of PMUT ultrasonic sensors, while also improving thermal response.

A semiconductor structure includes a substrate, a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.

Disclosed herein are embodiments of a sensor device, systems incorporating the same, and methods of fabricating the same. In one embodiment, a sensor device comprises a free-standing sensing element, such as a micro-electromechanical system (MEMS) device. The sensor device further comprises a metallic band to facilitate mounting the MEMS device to a mounting plate. The sensor device further comprises a conformal coating on a least a portion of a sensor region of the sensor device.

Disclosed herein are embodiments of a mass flow control apparatus, systems incorporating the same, and methods using the same. In one embodiment, a mass flow control apparatus comprises a flow modulating valve configured to modulate gas flow in a gas flow channel, a sensor device, such as a micro-electromechanical (MEMS) device, configured to generate a signal responsive to a condition of the gas flow, and a processing device operatively coupled to the flow modulating valve and the sensor device to control the flow modulating valve based on a signal received from the sensor device.

A die-wrapped packaged device includes at least one flexible substrate having a top side and a bottom side that has lead terminals, where the top side has outer positioned die bonding features coupled by traces to through-vias that couple through a thickness of the flexible substrate to the lead terminals. At least one die includes a substrate having a back side and a topside semiconductor surface including circuitry thereon having nodes coupled to bond pads. One of the sides of the die is mounted on the top side of the flexible circuit, and the flexible substrate has a sufficient length relative to the die so that the flexible substrate wraps to extend over at least two sidewalls of the die onto the top side of the flexible substrate so that the die bonding features contact the bond pads.

A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microelectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

A device for suppressing stray radiation includes a Micro-ElectroMechanical System (MEMS) sensor module and a conductive cage structure. The conductive cage structure may enclose the MEMS sensor module in order to suppress penetration of stray electromagnetic radiation with a stray wavelength λ.sub.o into the conductive cage structure, and the conductive cage structure may be arranged to be thermally insulated from the MEMS sensor module. The device may also include a connecting line. The connecting line may be connected to the MEMS sensor module and fed through the conductive cage structure by a capacitive element.

A MEMS device manufacturing method and a MEMS device are provided which can enhance a degree of vacuum inside an operation space and reduce the installation cost and maintenance cost of a manufacturing apparatus as well as manufacturing cost. A MEMS device includes a MEMS device wafer having an operation element formed on a Si substrate, and a CAP wafer provided to cover the MEMS device wafer to form an operation space for operably accommodating the operation element. The CAP wafer is made of silicon and includes vent holes formed to communicate with the operation space. The operation space is sealed by performing a heat treatment in a hydrogen gas atmosphere to close the vent holes by silicon surface migration of the CAP wafer with the CAP wafer and the MEMS device wafer bonded.