A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.

The friction driven linear motor includes a slide element with a portion with a pair of parallel straight sides. The slide element is contiguous with a zig-zag spring-like element, which is contiguous with an anchor block, which is contiguous with a MEMS substrate. The zig-zag spring-like element deforms as the slide element moves away from the anchor block. There are opposing pairs of v-beam thermal actuators. Each actuator includes a projecting cantilever beam with an end tip cycled to impinge, angularly, the slide element and extend, therein frictionally pushing the slide. A modulating current ohmically cycles the actuator from retraction to braking to pushing. At high frequencies the cantilever beam never fully retracts. The entire linear motor is composed of and is etched on a MEMS substrate.

A platform includes first and second actuation layers. The first actuation layer includes first and second frames and a plurality of actuators connected between the first frame and the second frame, wherein the plurality of actuators are adapted to move the first and second frames with respect to each other in a first direction. The second actuation layer includes third and fourth frames and a plurality of actuators connected between the third frame and the fourth frame, wherein the plurality of actuators are adapted to move the third frame and the fourth frame with respect to each other in a second direction, different from the first direction. Thereby, the fourth frame of the second actuation layer and the second frame of the first actuation layer are mechanically connected to each other, such that the second actuation layer experiences the movement in the first direction induced by the first actuation layer.

The disclosure relates to an actuator based on carbon nanotubes and actuating system using the same. The actuator includes: a carbon nanotube layer and a vanadium dioxide layer stacked with each other. Because the drastic, reversible phase transition of VO.sub.2, the actuator has giant deformation amplitude and fast response. An actuating system using the actuator is also provided.

A haptic actuator device includes a surface with a mechanical property responsive to localized temperature changes. The surface can include a layer or sheet comprising a shape-memory material. The haptic actuator device can further include an actuator configured to selectively deform a plurality of regions in the sheet; and a temperature controller adapted to control the temperatures of the plurality of regions. A method of localized actuation includes selectively controlling the temperatures of the plurality of regions to be above a shape-memory transition temperature of the shape-memory material; selectively deforming at least one of the regions; while maintaining the deformation of the at least one region, lowering the temperature of the at least one region to below the shape-memory transition temperature; subsequently withdrawing the applied stress; and thereafter heating the at least one region to above the shape-memory transition temperature, causing the region to return to its pre-deformation shape.

A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

Provided is a method including at least the thermal treatment step of thermally treating a SOI substrate having a first silicon layer at a first temperature that the diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than the diffusion flow rate of an interstitial oxygen atom and the processing step of processing the SOI substrate after the thermal treatment step to obtain a displacement enlarging mechanism.

Microelectronic structure comprising at least one movable mass that is mechanically connected to a first mechanical element by a first mechanically linking connector and to a second mechanical element (24) by electrically conductive second mechanically linking connector, and a device for electrically biasing the second mechanically linking connector, the second mechanically linking connector being such that they are the seat of a thermo-piezoresistive effect, the second linking connector and the movable mass being placed with respect to each other so that a movement of the movable mass applies a mechanical stress to the second linking connector, wherein the electrically biasing device are DC voltage biasing device and form, with at least the second mechanically linking connector, a thermo-piezoresistive feedback electric circuit.

A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

A MEMS nanotube based radiation sensor that is low cost, low power, compact, reliable and is applicable across many fields and a method for fabricating such a sensor are described. Each sensor may be connected to an array of similar but distinct sensors that leverage different materials and nanotube technology to detect radiation.