B81B2201/032

AN APPARATUS AND METHOD

An implantable cardiovascular pressure sensor comprising a rigid enclosure sealed by a flexible membrane; and an elongate compliant member comprising a piezoelectric material, the member having a width and a length greater than the width, and two ends separated by the length and two sides separated by the width; wherein the flexible membrane is coupled to the elongate compliant member to transfer external fluid pressure load to the elongate compliant member to cause deflection of the elongate compliant member in response to changes in the external fluid pressure; the pressure sensor further comprising a first acoustic wave device provided by the piezoelectric material of the elongate compliant member for sensing said deflection.

MEMS device comprising a membrane and an actuator

A MEMS device includes a semiconductor support body having a first cavity, a membrane including a peripheral portion, fixed to the support body, and a suspended portion. A first deformable structure is at a distance from a central part of the suspended portion of the membrane and a second deformable structure is laterally offset relative to the first deformable structure towards the peripheral portion of the membrane. A projecting region is fixed under the membrane. The second deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a first direction, and the first deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a second direction.

INTEGRATED ULTRASONIC TRANSDUCERS
20210137497 · 2021-05-13 ·

Described are transducer assemblies and imaging devices comprising: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

WIDEBAND PIEZOELECTRIC VIBRATORY MEMS HARVESTER
20210135601 · 2021-05-06 ·

Several types of piezoelectric MEMS vibration energy harvesters are described herein as well as methods of fabricating the vibration energy harvesters. The vibration energy harvesters generally comprise a serpentine structure having a central longitudinal axis; a piezoelectric film deposited on a surface of the serpentine structure; a central mass located at a mid-portion of the central longitudinal axis; two lateral masses positioned at opposing corners of the serpentine structure; anchor points at two other opposing corners of the serpentine structure; and upper and lower electrode layers. The energy harvesters have a 180 degree rotational symmetry about the central mass and when the serpentine structure experiences a strain, the piezoelectric film generates a voltage. The geometry of the energy harvesters allows for lower frequency and wider bandwidth operation as well as higher power density.

Sensing devices, sensors, and methods for monitoring environmental conditions
11011323 · 2021-05-18 · ·

Sensors, systems, and methods for monitoring environmental conditions, such as physical, electromagnetic, thermal, and/or chemical parameters within an environment, over extended periods of time with the use of one or more electromechanical sensing devices and electronic circuitry for processing an output of the sensing devices. The sensing devices each include a cantilevered structure and at least one contact configured for contact-mode operation with the cantilevered structure in response to the cantilevered structure deflecting toward or away from the contact when exposed to the parameter of interest. The cantilevered structure has at least first and second beams of dissimilar materials, at least one of which has at least one property that changes as a result of exposure to the parameter.

Monolithic integration of piezoelectric micromachined ultrasonic transducers and CMOS and method for producing the same

A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.

Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

Integrated ultrasonic transducers

A transducer assembly includes: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

MEMS DEVICES AND METHODS OF FORMING THEREOF

In a non-limiting embodiment, a MEMS device may include a substrate having a device stopper. The device stopper may be integral to the substrate and formed of the substrate material. A thermal dielectric isolation layer may be arranged over the device stopper and the substrate. A device cavity may extend through the substrate and the thermal dielectric isolation layer. The thermal dielectric isolation layer and the device stopper at least partially surround the device cavity. An active device layer may be arranged over the thermal dielectric isolation layer and the device cavity.

Device with a suspended membrane having an increased amplitude of displacement

A device with a membrane comprising a support, a membrane made of a polymer material suspended on said support and at least one actuating module arranged opposite a face of the membrane and separate from said membrane, said actuating module comprising at least one actuator comprising at least one piezoelectric material and a beam connected to the support and separate from the membrane, the piezoelectric material being connected to the beam, such that, when a difference in electric potential is applied to the piezoelectric material, a bimetal effect appears between the piezoelectric material and the beam deforming the beam in the direction of the membrane, causing the deformation of the membrane, said device also comprising at least one electrostatic actuator configured for compressing at least one part of the membrane on the at least one part of the actuating module.