A bending actuator and methods for making and using the same. A beam of anisotropic polymer material, such as nylon, characterized by a greater degree of molecular orientation along a longitudinal axis than transverse to the longitudinal axis, has a heating element in thermal contact with at least one of a pair of opposing faces parallel to the longitudinal axis of the beam. The heating element in certain embodiments provides for photothermal activation of the bending actuator.

In accordance with an embodiment, a microelectromechanical transducer includes a displaceable membrane having an undulated section comprising at least one undulation trough and at least one undulation peak and a plurality of piezoelectric unit cells. At least one piezoelectric unit cell is provided in each case in at least one undulation trough and at least one undulation peak, where each piezoelectric unit cell has a piezoelectric layer and at least one electrode in electrical contact with the piezoelectric layer. The membrane may be formed as a planar component having a substantially larger extent in a first and a second spatial direction, which are orthogonal to one another, than in a third spatial direction, which is orthogonal to the first and the second spatial direction and defines an axial direction of the membrane.

A repulsive-attractive-force electrostatic actuator according to some embodiments of the invention includes a first actuator layer including a first substrate, a first electrode pattern, and a second electrode pattern. The actuator further includes a second actuator layer including a second substrate, a third electrode pattern, and a fourth electrode pattern. The actuator further includes a first voltage source connected to the first and second electrode patterns such that the first electrode pattern is at a relative voltage of V1 to the second electrode pattern, and a second voltage source connected to the third and fourth electrode patterns such that the third electrode pattern is at a relative voltage of V2 to the fourth electrode pattern. The applied relative voltages V1 and V2 are selectable to provide one of a selected repulsive force or a selected attractive force between the first and second actuator layers.

A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A light deflector includes a stationary part; a movable unit having a reflecting surface; a connecting part between the movable unit and the stationary part; a drive unit disposed on a first surface of the connecting part, the drive unit configured to deform the connecting part to oscillate the movable unit; and a rib disposed on a second surface of the connecting part, the second surface being an opposite surface of the first surface. The rib includes a portion whose longitudinal direction is orthogonal to a direction at which the connecting part is bent.

Provided herein are multifunctional photoresponsive compositions that can undergo conversion from an aggregation-caused quenching (ACQ) state to an aggregation-induced emission (ME) state and macroscopic actuation and systems comprising the same and methods of use thereof.

An optical device includes a support portion, a first movable portion having an optical surface, a second movable portion having a frame shape and surrounding the first movable portion, a first coupling portion coupling the first movable portion and the second movable portion to each other, a second coupling portion coupling the second movable portion and the support portion to each other, and a softening member which has a softening characteristic and to which stress is applied when the first movable portion swings around a first axis. When viewed in a direction perpendicular to the optical surface, the softening member is provided to a portion of the second movable portion, the portion extending between a drive element and the first coupling portion, and is not electrically connected to an outside.

A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.

A MEMS device includes a semiconductor support body having a first cavity, a membrane including a peripheral portion, fixed to the support body, and a suspended portion. A first deformable structure is at a distance from a central part of the suspended portion of the membrane and a second deformable structure is laterally offset relative to the first deformable structure towards the peripheral portion of the membrane. A projecting region is fixed under the membrane. The second deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a first direction, and the first deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a second direction.