Patent classifications
B81B2203/0136
Cellular array electrostatic actuator
Illustrative embodiments provide an electrostatic actuator and methods of making and operating an electrostatic actuator. The electrostatic actuator comprises a framework and a plurality of electrodes. The framework comprises walls defining a plurality of cells forming an array of cells. The plurality of electrodes comprise an electrode in each cell in the plurality of cells. A gap separates the electrode in each cell from the walls of the cell. The framework is configured to contract in response to an electrical signal applied between the framework and the plurality of electrodes.
MEMS DEVICE, ASSEMBLY COMPRISING THE MEMS DEVICE, AND METHOD OF OPERATING THE MEMS DEVICE
Proposed is a MEMS device comprising a layer stack having at least one second layer formed between a first layer and a third layer. A cavity is formed in the second layer. The MEMS device further comprises two laterally deflectable elements arranged laterally spaced apart in the cavity. Each of the two laterally deflectable elements comprises a respective end connected to a side wall of the cavity. Additionally, the MEMS device comprises a connecting element connected to the two laterally deflectable elements to couple the movement of the two laterally deflectable elements. A plurality of first fingers are arranged discretely spaced between the two laterally deflectable elements on the side wall of the cavity. Further, a plurality of second fingers are arranged discretely spaced between the two laterally deflectable elements on the connecting element. The plurality of second fingers interdigitate with the plurality of first fingers. Further, the plurality of second fingers are laterally displaceable relative to the plurality of first fingers upon deformation of the two laterally deflectable elements such that the plurality of first fingers and the plurality of second fingers define a plurality of volume variable sub-cavities within the cavity. Each of the plurality of sub-cavities is in contact with an ambient fluid of the MEMS device via a respective opening. In case of adjacent sub-cavities of the plurality of sub-cavities, the respective opening of one sub-cavity of the adjacent sub-cavities is formed in a different layer of the first layer, the second layer and the third layer than the opening of the other sub-cavity of the adjacent sub-cavities.
CMOS-MEMS HUMIDITY SENSOR
A CMOS-MEMS humidity sensor, comprising: a complementary metal oxide semiconductor (CMOS) ASIC readout circuit and a microelectromechanical system (MEMS) humidity sensor. The MEMS humidity sensor is provided on the ASIC readout circuit. The ASIC readout circuit comprises: a substrate, a heating resistor layer, a metal layer, and dielectric layers, the heating resistor layer being located above the substrate, the metal layer being located above the heating resistor layer, and the substrate, the heating resistor layer, and the metal layer being partitioned by dielectric layers. The MEMS humidity sensor comprises: an aluminum electrode layer, a passivation layer, and a humidity sensitive layer, the passivation layer being located above the aluminum electrode layer, and the humidity sensitive layer being located above the passivation layer. The provision of heating resistors in the ASIC circuit realizes the heating function and satisfies the requirements of the standard CMOS process, so that the CMOS-MEMS integrated humidity sensor can be used stably under low temperature and high humidity conditions.
MICRO-ELECTROMECHANICAL SYSTEM DEVICE INCLUDING A PRECISION PROOF MASS ELEMENT AND METHODS FOR FORMING THE SAME
A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.
Dual micro-electro mechanical system and manufacturing method thereof
A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.
Electrode layer partitioning
A MEMS sensor includes a proof mass that is suspended over a substrate. A sense electrode is located on a top surface of the substrate parallel to the proof mass, and forms a capacitor with the proof mass. The sense electrodes have a plurality of slots that provide improved performance for the MEMS sensor. A measured value sensed by the MEMS sensor is determined based on the movement of the proof mass relative to the slotted sense electrode.
MICROMECHANICAL ARM ARRAY IN MICRO-ELECTROMECHANICAL SYSTEM (MEMS) ACTUATORS
A micromechanical arm array is provided. The micromechanical arm array comprises: a plurality of micromechanical arms spaced from each other in a first horizontal direction and extending in a second horizontal direction, wherein each micromechanical arm comprises a protrusion at a top of each micromechanical arm and protruding upwardly in a vertical direction; a plurality of protection films, each protection film encapsulating one of the plurality of micromechanical arms; and a metal connection structure extending in the first horizontal direction. The metal connection structure comprises: a plurality of joint portions, each joint portion corresponding to and surrounding the protrusion of one of the plurality of micromechanical arms; and a plurality of connection portions extending in the first horizontal direction and connecting two neighboring joint portions.
MULTIPLE LAYER ELECTRODE TRANSDUCERS
An electrostatic transducer includes a substrate oriented in a plane, a fixed electrode supported by the substrate, and a moveable electrode supported by the substrate, spaced from the fixed electrode in a first direction parallel to the plane, and configured for movement in a second direction transverse to the plane, such that an extent to which the fixed and moveable electrodes overlap changes during the movement. The fixed and moveable electrodes comprise one or more of a plurality of conductive layers, the plurality of conductive layers including at least three layers. The fixed electrode includes a stacked arrangement of two or more spaced apart conductive layers of the plurality of conductive layers.
MEMS sound transducer
The present invention discloses a MEMS sound transducer. The sound transducer includes: a substrate having a back cavity; a stator, the stator having a central portion suspending on the back cavity and at least two fixed arms extending from the center portion to the substrate and fixed on the substrate; a movable cantilever, mounted to the substrate, at least partially facing the back cavity and disposed between two adjacent fixed arms; wherein, the movable cantilever has a fixed end mounted to the substrate and a free edge facing the fixed arms with space; the free edge has a plurality of moving comb-fingers formed thereon; the stator has a plurality of fixed comb-fingers formed on the fixed arms; the moving comb-fingers and the fixed comb-fingers fit to each other to form a capacitor with an overlap area.
Method of manufacturing semiconductor device and semiconductor device
A method includes attaching an upper substrate to an upper surface of a sensor substrate, forming, on an upper surface of the upper substrate, a mask providing a first opening and a second opening communicating with the first opening, the second opening having a width that decreases with increase in a distance from the first opening, carrying out a sandblast process on the upper substrate exposed to an outside via the first opening and the second opening, allowing the sensor substrate to be exposed to the outside immediately below the first opening, and forming a slope on the upper substrate immediately below the second opening, and forming a first wiring member in contact with the exposed sensor substrate and a second wiring member being in contact with the slope and continuing to the first wiring member.