A physical quantity sensor includes a substrate provided with a first fixed electrode, a movable body provided to be swingable with respect to the substrate about a rotation axis along a Y axis, and a stopper restricting rotation of the movable body. The movable body is provided with an elastic portion at a position overlapping the stopper in a plan view viewed from the Z axis direction. The first mass portion includes a first region, and a second region far from the rotation axis. A first gap distance of a first gap between the first mass portion and the first fixed electrode in the first region is smaller than a second gap distance of a second gap between the first mass portion and the first fixed electrode in the second region.

A microelectromechanical system device includes: a substrate; a first electrode on the substrate; a second electrode on the substrate, a first gap between the first electrode and the second electrode; a third electrode on the substrate; a fourth electrode on the substrate, a second gap between the third electrode and the fourth electrode; a first electrode pad on the substrate; a second electrode pad on the substrate; and a hinge extending between the first electrode pad and the second electrode pad. The hinge has a first extension and a second extension, the first extension over the first gap and the second extension over the second gap.

A microelectromechanical systems (MEMS) device includes a mirror, and a mirror post having a first end and a second end, the first end coupled to the mirror. Additionally, the MEMS device includes a hinge having a first side and a second side, the first side of the hinge coupled to the second end of the mirror post. Further, the MEMS device includes a pendulum electrode coupled to the second side of the hinge, and a pair of control electrodes spaced from the pendulum electrode.

A transducer includes a second semiconductor substrate on which a first insulation layer having a first metal layer on its surface is disposed, a first semiconductor substrate that overlaps the second semiconductor substrate and on which a second insulation layer having a second metal layer on its surface is disposed, a functional element located between the first semiconductor substrate and the second semiconductor substrate, and a eutectic reaction layer bonding the first semiconductor substrate and the second semiconductor substrate to each other in a bonding region located around the functional element. The eutectic reaction layer is a bonding layer formed by eutectic bonding between the first metal layer and the second metal layer. At least one of the first insulation layer and the second insulation layer has a recess having a bottom wider than the bonding region in plan view. The bonding region is located at the bottom.