A MEMS sensor is disclosed that includes dual pendulous proof masses comprised of sections of different thickness to allow simultaneous suppression of vertical and lateral thermal gradient-induced offsets in a MEMS sensor while still allowing for the normal operation of the accelerometer. In an embodiment, the structure and different sections of the MEMS sensor is realized using multiple polysilicon layers. In other embodiments, the structure and different thickness sections may be realized with other materials and processes. For example, plating, etching, or silicon-on-nothing (SON) processing.

A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.

An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.

A MEMS accelerometric sensor includes a bearing structure and a suspended region that is made of semiconductor material, mobile with respect to the bearing structure. At least one modulation electrode is fixed to the bearing structure and is biased with an electrical modulation signal including at least one periodic component having a first frequency. At least one variable capacitor is formed by the suspended region and by the modulation electrode in such a way that the suspended region is subjected to an electrostatic force that depends upon the electrical modulation signal. A sensing assembly generates, when the accelerometric sensor is subjected to an acceleration, an electrical sensing signal indicating the position of the suspended region with respect to the bearing structure and includes a frequency-modulated component that is a function of the acceleration and of the first frequency.

A physical quantity sensor has a first movable section, a second movable section that has a rotational moment, which is generated when acceleration is applied, that is different from the first movable section, a movable section that is supported so as to be able to rock about an axis which is positioned between the first movable section and the second movable section, a first detection electrode which is arranged so as to oppose the first movable section, a second detection electrode which is arranged so as to oppose the second movable section, and a frame-form section which is arranged so as to surround at least a portion of the periphery of the movable section in planar view of the movable section and which has the same potential as the movable section.

A micromechanical component having a movable seismic mass developed in a second and third silicon functional layer, a hollow body being developed in the second and third silicon functional layers, which has a cover element developed in a fourth silicon functional layer.

Microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The beam, the hinges and the anchor may be made of the same material in some configurations. The switch can include electrodes, disposed on a surface of the substrate, for electrically controlling the orientation of the beam. The hinges may be thinner than the beam, resulting in the hinges being more flexible than the beam. In some configurations, the hinges are located within an opening in the beam. The hinges may extend in the same direction of the axis of rotation of the beam and/or in a direction perpendicular to the axis of rotation of the beam.

A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices.

A mask includes a substrate, a light-reflecting structure, a patterned layer, and a plurality of bumps. The substrate has a first surface and a second surface. The light-reflecting structure is located on the first surface of the substrate. The patterned layer is located on the light-reflecting structure. The bumps are located on the second surface of the substrate. The bumps define a plurality of voids therebetween and protrude in a direction away from the second surface of the substrate.

A micromechanical sensor includes a substrate having a cavity; a flexible diaphragm that spans the cavity; and a lever element that spans the diaphragm and has a first and a second end section, the end sections lying on opposite sides of a center section. A first joint element is fitted between the first end section and the substrate and a second joint element is fitted between the center section and the diaphragm, so that the lever element is able to be pivoted due to a deflection of the diaphragm. In addition, two capacitive sensors are provided, each having two electrodes, one electrode of each sensor being mounted at one of the end sections of the lever element, and the other being mounted on the substrate. The electrodes of the sensors are disposed in such a way that distances between the electrodes of different sensors are influenced oppositely when the lever element is pivoted. Moreover, the sensor includes an actuator for applying an actuating force between the lever element and the substrate.