A MEMS structure is provided. The MEMS structure includes a substrate and a backplate, the substrate has an opening portion, and the backplate is disposed on one side of the substrate and has acoustic holes. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate, and the diaphragm extends across the opening portion of the substrate and includes outer ventilation holes and inner ventilation holes arranged in a concentric manner. The outer ventilation holes and the inner ventilation holes are relatively arranged in a ring shape and surround the center of the diaphragm. The MEMS structure further includes a pillar disposed between the backplate and the diaphragm. The pillar prevents the diaphragm from being electrically connected to the backplate.

A microelectromechanical system (MEMS) device is provided that includes a substrate having a dielectric cavity formed therein and a movable electromechanical device suspended in the dielectric cavity. The dielectric cavity includes a substantially planar bottom surface and at least one sidewall surface extending substantially perpendicularly from the bottom surface. The movable electromechanical device is suspended in the dielectric cavity such that the movable electromechanical device is spaced apart from the bottom surface and the at least one sidewall surface of the dielectric cavity. The bottom surface of the cavity and each of the at least one sidewall surface of the cavity meet at a rectilinear corner.

A electromechanical relay device (100) comprising a source electrode (102), a beam (104) mounted on the source electrode at a first end and electrically coupled to the source electrode; a first drain electrode (112) located adjacent a second end of the beam, wherein a first contact (110) on the beam is arranged to be separated from a second contact (112) on the first drain electrode when the relay device is in a first condition; a first gate electrode (106 arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition; and wherein the first and second contacts are each coated with a layer of nanocrystalline graphite.

A comb drive includes an inactive comb finger array and an opposing active comb finger array positioned to oppose the inactive comb finger array and configured to move in a non-linear path relative to the inactive comb finger array, wherein each comb finger array includes a comb spine and a plurality of comb fingers extending from its comb spine, and each comb finger on the active comb finger array is shaped to match a non-parallel profile. The non-parallel profile may be tapered, curved, or selected to linearize the capacitance in a gap between adjacent comb fingers from the inactive comb finger array when a comb finger from the active comb finger array moves through the gap.

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.

A method of forming an acoustic transducer comprises providing a substrate and depositing a first structural layer on the substrate. The first structural layer is selectively etched to form at least one of an enclosed trench or an enclosed pillar thereon. A second structural layer is deposited on the first structural layer and includes a depression or a bump corresponding to the enclosed trench or pillar, respectively. At least the second structural layer is heated to a temperature above a glass transition temperature of the second structural layer causing the second structural layer to reflow. A diaphragm layer is deposited on the second structural layer such that the diaphragm layer includes at least one of a downward facing corrugation corresponding to the depression or an upward facing corrugation corresponding to the bump. The diaphragm layer is released, thereby forming a diaphragm suspended over the substrate.

A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices.

Microelectromechanical sensor with an out-of-plane detection has a cross sensitivity in a first direction in the plane with a value of S.sub.T, the sensor comprising a support, a mass suspended from the support by beams stressed by bending, in such a way that the inertial mass is capable of moving with respect to the support about an axis of rotation contained in a plane of the sensor, a stress gauge suspended between the mass and the support. The bending beams have a dimension t.sub.f in the out-of-plane direction and the mass has a dimension t.sub.M in the out-of-plane direction such that t.sub.f=(t.sub.M2l.sub.armS.sub.T). L.sub.arm is the distance between the centre of gravity of the mass and the centre of the bending beams projected onto the first direction.

A comb drive includes an inactive comb finger array and an opposing active comb finger array positioned to oppose the inactive comb finger array and configured to move in a non-linear path relative to the inactive comb finger array, wherein each comb finger array includes a comb spine and a plurality of comb fingers extending from its comb spine, and each comb finger on the active comb finger array is shaped to match a non-parallel profile. The non-parallel profile may be tapered, curved, or selected to linearize the capacitance in a gap between adjacent comb fingers from the inactive comb finger array when a comb finger from the active comb finger array moves through the gap.

Provided is a MEMS device. The MEMS device includes: substrate having back cavity passing therethrough; diaphragm connected to the substrate and covers the back cavity, the diaphragm comprises first and second membranes, and accommodating space is formed between the first and second membranes; supports arranged in the accommodating space, and opposite ends of the support are connected to the first and second membranes; counter electrode arranged in the accommodating space, the first and second membranes each include conductive and second regions, the second region is formed by semiconductor material without doping conductive ions. Through design of the first and second membranes as the first region and the second region, respectively, the second region is formed by semiconductor material without doping conductive ions, and the first region is formed by doping conductive ions in the semiconductor material, so that the compliance performance is improved and not at risk of delamination.