B81B2203/0307

Silicon Carbide Microelectromechanical Structure, Device, and Method

Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.

MEMS DEVICES AND CIRCUITS INCLUDING SAME
20200102213 · 2020-04-02 ·

A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices.

Silicon carbide microelectromechanical structure, device, and method

Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.

MEMS MIRROR ARRAYS WITH REDUCED COUPLING BETWEEN MIRRORS
20240025733 · 2024-01-25 · ·

A MEM array may comprise a first stage comprising a first stage reflective surface, and a second stage comprising a second stage reflective surface. The MEM array may comprise a base wafer positioned below the first stage and the second stage; and a first frame pivotally coupled to the first stage. The first frame may be pivotally coupled to a second frame, which may comprise a second frame high aspect ratio (AR) member that may be operable to reduce mechanical motion of the second stage.

SOUND PRODUCING CELL

A sound producing cell includes a membrane and an actuating layer. The membrane includes a first membrane subpart and a second membrane subpart, wherein the first membrane subpart and the second membrane subpart are opposite to each other. The actuating layer is disposed on the first membrane subpart and the second membrane subpart. The first membrane subpart includes a first anchored edge which is fully or partially anchored, and edges of the first membrane subpart other than the first anchored edge are non-anchored. The second membrane subpart includes a second anchored edge which is fully or partially anchored, and edges of the second membrane subpart other than the second anchored edge are non-anchored.

3-axis angular accelerometer
10585111 · 2020-03-10 · ·

Angular accelerometers are described, as are systems employing such accelerometers. The angular accelerometers may include a proof mass and rotational acceleration detection beams directed toward the center of the proof mass. The angular accelerometers may include sensing capabilities for angular acceleration about three orthogonal axes. The sensing regions for angular acceleration about one of the three axes may be positioned radially closer to the center of the proof mass than the sensing regions for angular acceleration about the other two axes. The proof mass may be connected to the substrate though one or more anchors.

MEMS DEVICE AND METHOD FOR FORMING THE SAME
20200071157 · 2020-03-05 ·

A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer, a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer.

OFFSET REJECTION ELECTRODES

A MEMS sensor that comprises a sensing reference plane, at least one anchor coupled to the sensing reference plane, wherein the sensing reference plane is divided by a first and a second axis forming four quadrants on the sensing reference plane, at least one proof mass coupled to the at least one anchor, wherein one of the at least one proof mass moves under an external excitation, and a pattern of sensing elements on the sensing reference plane to detect motion normal of the at least one proof mass relative to the sensing reference plane, wherein the pattern of sensing elements comprises at least three sensing elements in each of the four quadrants.

Support pillar

The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.

Support pillar

The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.