A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.

A method of manufacturing a photothermal conversion element includes preparing a solid material and forming a processed region processed by irradiation of the solid material with a laser beam. The forming includes grain refining the solid material to blacken the processed region.

Wettable structures that retain liquid layers are defined at surfaces of substrates. The wettable structures include grooves or ridges that are spaced apart by between 10 nm and 10 m and can be defined in substrate or in a layer formed on a surface of the substrate. In typical examples, wettable structures are defined with hydrophobic materials or at hydrophobic surfaces and produce hydrophilic surfaces.

A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

The invention generally relates to drives for microelectromechanical acoustic pressure-generating device, which may be implemented in a microelectromechanical system (MEMS). In some embodiments of the invention, the microelectromechanical acoustic pressure-generating device is implemented in a chip/die, e.g. in form of a System-on-Chip (SoC) or a System-in-Package (SiP). Further embodiments of the invention relate to the use of such acoustic pressure-generating device in a microelectromechanical loudspeaker system, for example, headphones, hearing-aids, or the like. Embodiments of the invention relate to the miniaturization of the device. Some of the embodiments focus on countermeasures that reduce the pull-in force, which can facilitate further miniaturization of the microelectromechanical acoustic pressure-generating device.

The present disclosure provides an MEMS device, a method for manufacturing an MEMS device and an electronic device, and belongs to the field of Micro-Electro-Mechanical System technology. The MEMS device includes: a first dielectric substrate and a first component on the first dielectric substrate; the first component and the first dielectric substrate enclose a movable space; the first component has a first portion corresponding to the movable space; the first portion has at least one first opening, and at least one protruding structure is on a side of the first portion close to the first dielectric substrate; orthographic projections of the at least one protruding structure and the at least one first opening on the first dielectric substrate do not overlap with each other, and a thickness of each protruding structure is smaller than a height of the movable space.