Patent classifications
B81B2203/0353
Electrostatic Device, Electrostatic Device Intermediate Body and Production Method
An electrostatic device includes: a fixed portion, a moveable portion, and an elastically-supporting portion that are formed in a same substrate; and a first glass package and a second glass package that are anodically bonded to each other on one and the other of front and back surfaces of the substrate with the fixed portion and the elastically-supporting portion separated from each other, the second glass package forms a sealed space in which the moveable portion is arranged between the first and second glass packages, an electret is formed at least partially in the fixed portion and the moveable portion, and a first electrode connected to the fixed portion and exposed on an outer surface of the second glass package and a second electrode connected to the elastically-supporting portion and exposed on the outer surface of the second glass package are formed in the second glass package.
MICROELECTROMECHANICAL MICROPHONE WITH MEMBRANE TRENCH REINFORCEMENTS AND METHOD OF FABRICATION
A microelectromechanical (MEMS) microphone with membrane trench reinforcements and method of fabrication is provided. The MEMS microphone includes a flexible plate and a rigid plate mechanically coupled to the flexible plate. The MEMS microphone includes a stoppage member affixed to the rigid plate and extending perpendicular relative to a surface of the rigid plate opposite the surface of the flexible plate. The stoppage member limits motion of the flexible plate. The rigid plate includes a reverse bending edge that includes a first lateral etch stop that includes a first corner radius and a second corner radius. The first corner radius is more than 100 nanometers and the second corner radius is more than 25 nanometers. Further, a lateral step width between the first corner radius and the second corner radius is less than around 4 micrometers.
SEMICONDUCTOR STRUCTURE AND FORMATION THEREOF
A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.
CHARGE TRANSFER CIRCUITRY FOR MEMS DEVICES
Microelectromechanical system (MEMS) devices, methods of operating the MEMS device, and methods of manufacturing the MEMS device are disclosed. In some embodiments, the MEMS device includes a glass substrate; an electrode on the glass substrate; a hinge mechanically coupled to the electrode; a membrane mirror mechanically coupled to the hinge; a TFT on the glass substrate and electrically coupled to the electrode; and a control circuit comprising: a multiplexer configured to turn on or turn off the TFT; and a drive source configured to provide a drive signal for charging the electrode through the TFT. An amplitude of the drive signal corresponds to an amount of charge, and the amount of charge generates an electrostatic force for actuating the hinge and a portion of the membrane mirror mechanically coupled to the hinge. In some embodiments, the MEMS devices comprise a charge transfer circuit for providing the amount of charge.
MEMS Chip
The present disclosure discloses a MEMS chip which includes a substrate, a back plate fixed on the substrate, and a membrane fixed on the substrate and located above the back plate. A sealed space is formed between the membrane and the back plate. A support pillar is received in the sealed space. Two ends of the support pillar along a vibration direction of the membrane are separately fixed on the membrane and the back plate. As a result, when decreasing the volume of the back cavity, the resonance frequency of the MEMS chip has been effectively improved and the SNR is simultaneously high. Furthermore, the support pillar can effectively improve the reliability and crack resistance of the membrane.
MEMS Chip
The present disclosure discloses a MEMS chip including a capacitance system and a substrate with a back cavity. The capacitance system includes a back plate and a membrane; the substrate is located on one side of the membrane away from the back plate, including a first surface opposite to the membrane, a second surface opposite to the first surface, and an inner wall connecting the first surface and the second surface and enclosing the back cavity; the inner wall includes a first opening close to the membrane, having a first width along a first direction perpendicular with a vibration direction of the membrane, and a second opening away from the membrane, having a second width smaller than the first width along the first direction. The resonance frequency of the MEMS chip has been effectively improved and the SNR is simultaneously high.
MEMS DEVICE WITH PERIMETER BAROMETRIC RELIEF PIERCE
A microelectromechanical systems (MEMS) die includes a first diaphragm and a second diaphragm, wherein the first diaphragm and the second diaphragm bound a sealed chamber. A stationary electrode is disposed within the sealed chamber between the first diaphragm and the second diaphragm. A tunnel passes through the first diaphragm and the second diaphragm without passing through the stationary electrode, wherein the tunnel is sealed off from the chamber. The MEMS die further includes a substrate having an opening formed therethrough, wherein the tunnel provides fluid communication from the opening, through the second diaphragm, and through the first diaphragm.
PIEZOELECTRIC MEMS DEVICE WITH THERMAL COMPENSATION FROM DIFFERENT MATERIAL THICKNESSES
A piezoelectric microelectromechanical systems device can include a cavity bounded by walls and an asymmetrical bimorph structure at least partially spanning the cavity that includes at least a piezoelectric layer and two electrode layers. The electrode layers can have relative thicknesses configured to compensate for expected temperature stress in the bimorph structure. Thus, metals having different thicknesses can be positioned and configured to compensate deflection due to thermal stress of any or all of the piezoelectric layer, the first metal layer, and second metal layer and a substrate. A method for making the piezoelectric microelectromechanical systems device is also provided.
Micromechanical component for a sensor device and manufacturing method for a micromechanical component for a sensor device
A micromechanical component for a sensor device including a substrate having a substrate surface, at least one stator electrode situated on the substrate surface and/or on the at least one intermediate layer covering at least partially the substrate surface, which is formed in each case from a first semiconductor and/or metal layer, at least one adjustably situated actuator electrode, which is formed in each case from a second semiconductor and/or metal layer, and a diaphragm spanning the at least one stator electrode and the at least one actuator electrode, including a diaphragm exterior side directed away from the at least one stator electrode, which is formed from a third semiconductor and/or metal layer, a stiffening and/or protective structure protruding at the diaphragm exterior side being formed from a fourth semiconductor and/or metal layer.
MEMS DEVICE HAVING A MECHANICAL BARRIER STRUCTURE
A MEMS device comprises a housing with an interior volume, wherein the housing includes an access port to the interior volume; a MEMS sound transducer in the housing, and a mechanical barrier structure having a plate element that is fixed by elastic spacers to a carrier and overlaps the access port, and providing a ventilation path passing a boundary region of the plate element, wherein a clearance of the ventilation path is set by the distance of the boundary region of the plate element to the housing or by the distance of the boundary region of the plate element to a blocking structure that opposes the boundary region of the plate element.