A semiconductor device includes a first passivation layer disposed on a semiconductor base. The semiconductor device further includes a dielectric layer disposed on the first passivation layer. The semiconductor device further includes a plurality of pillars disposed in an opening in the dielectric layer and the first passivation layer and from a top surface of the semiconductor base. The semiconductor device further includes a metal layer disposed on the exterior surfaces of the plurality of pillars and sidewalls of the dielectric layer and the first passivation layer and on the exposed top surface of the semiconductor base. The semiconductor device further includes a second passivation layer disposed on the metal layer and a top surface of the semiconductor device; wherein the second passivation layer has an electrical charge.

A microelectromechanical component including, vertically at a distance from one another, a substrate device, a first, a second, and a third functional layer, a vertical stop being formed between the second and third functional layer, the vertical stop having a stop area on a surface of the second functional layer facing the third functional layer, wherein the second functional layer is connected to the first functional layer in a connecting area allocated to the stop area.

A semiconductor device includes a first passivation layer disposed on a semiconductor base. The semiconductor device further includes a dielectric layer disposed on the first passivation layer. The semiconductor device further includes a plurality of pillars disposed in an opening in the dielectric layer and the first passivation layer and from a top surface of the semiconductor base. The semiconductor device further includes a metal layer disposed on the exterior surfaces of the plurality of pillars and sidewalls of the dielectric layer and the first passivation layer and on the exposed top surface of the semiconductor base. The semiconductor device further includes a second passivation layer disposed on the metal layer and a top surface of the semiconductor device; wherein the second passivation layer has an electrical charge.

A dry adhesive and a method of forming a dry adhesive. The method includes forming an opening through an etch layer and to a barrier layer, expanding the opening in the etch layer at the barrier layer, filling the opening with a material, removing the barrier layer from the material in the opening, and removing the etch layer from the material in the opening.

Substrates comprising a functionalizable layer, a polymer layer comprising a plurality of micro-scale or nano-scale patterns, or combinations thereof, and a backing layer and the preparation thereof by using room-temperature UV nano-embossing processes are disclosed. The substrates can be prepared by a roll-to-roll continuous process. The substrates can be used as flow cells, nanofluidic or microfluidic devices for biological molecules analysis.

A sensor comprising a support and a flexible structure arranged on the support is provided. The flexible structure comprises a frustum-shaped portion having a wider end and a narrower end, wherein the wider end of the frustum-shaped portion is arranged proximal to the support, and an elongated portion extending from the narrower end of the frustum-shaped portion, wherein the flexible structure further comprises a stretchable conducting film arranged on the frustum-shaped portion. A method of preparing such a sensor is also provided.

A method for fabricating a fluidic device includes depositing a sacrificial material on a pillar array arranged on a substrate. The method also includes removing a portion of the sacrificial material. The method further includes depositing a sealing layer on the pillar array to form a sealed fluidic cavity.

Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

An example microelectromechanical system (MEMS) switch comprises a hinge plane having two or more intersecting hinges; a switch plate; and a plurality of electrostatic pads. Selective activation of the electrostatic pads causes torsion of at least one of the two or more intersecting hinges to tilt the switch plate to a selected one of three or more positions.

Devices, systems and techniques are described for producing and implementing articles and materials having nanoscale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography.