A sensor chip combining a substrate comprising at least one CMOS circuit, a MEMS substrate and another substrate comprising at least one CMOS circuit in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first substrate with a first surface and a second surface comprising at least one CMOS circuit; a MEMS substrate with a first surface and a second surface; and a second substrate comprising at least one CMOS circuit. Where the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the MEMS substrate. The second surface of the MEMS substrate is attached to the second substrate. The first substrate, the MEMS substrate, the second substrate and the packaging substrate are mechanically attached and provided with electrical inter-connects.

A MEMS device package assembly for encapsulating one or more internal components includes a first MEMS device package. The first package includes a cover and a substrate attached to the cover by any suitable methods of attachment. A corrugated structure is formed on at least one of an inner or outer wall of the cover. The assembly further includes a second MEMS device package having a cover, a substrate, and a corrugated structured formed on at least one of an inner or outer wall of the cover. The first and second MEMS device packages may be coupled to the same substrate or different substrate. In another embodiment, the first MEMS device package may be mounted on the second MEMS device package. In yet another embodiment, the first MEMS device package may be contained in the second MEMS device package.

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

A semiconductor structure includes a first substrate including a cavity extended into the first substrate, a device disposed within the cavity, a first dielectric layer disposed over the first substrate and a first conductive structure surrounded by the first dielectric layer, and a second substrate including a second dielectric layer disposed over the second substrate and a second conductive structure surrounded by the second dielectric layer, wherein the first conductive structure is bonded with the second conductive structure and the first dielectric layer is bonded with the second dielectric layer to seal the cavity.

Implementations of absolute pressure sensor devices may include a microelectromechanical system (MEMS) absolute pressure sensor coupled over a controller die. The MEMS absolute pressure sensor may be mechanically coupled to the controller die and may also be configured to electrically couple with the controller die. A perimeter of the controller die may be one of the same size and larger than a perimeter of the MEMS absolute pressure sensor. The controller die may be configured to electrically couple with a module through an electrical connector.

A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.

A MEMS microphone is disclosed. The MEMS microphone includes an encapsulation structure provided with an accommodation space; a MEMS chip for detecting sound signal accommodated in the accommodation space; an ASIC chip received in the accommodation space. The ASIC chip includes a signal processing module connected to MEMS chip for processing the sound signal detected by the MEMS chip and outputting the processed sound signal. The MEMS microphone further includes a temperature detection module for detecting temperature signal and outputting the temperature signal.

A micromechanical sensor device includes an evaluation circuit formed in a first substrate, and an MEMS structure which is situated in a cavity delimited by a second substrate and a third substrate, the MEMS structure and the second substrate being situated on top of each other, the MEMS structure being functionally connected to the evaluation circuit via a contact area, the contact area between the MEMS structure and the first substrate being situated essentially centrally on the second substrate and essentially centrally on the first substrate and has an essentially punctiform configuration, proceeding radially from the contact area, a clearance being formed between the first substrate and the second substrate.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

A microphone device includes a base and a microelectromechanical system (MEMS) transducer and an integrated circuit (IC) disposed on the base. The microphone device also includes a cover mounted on the base and covering the MEMS transducer and the IC. The MEMS transducer includes a diaphragm attached to a surface of the substrate and a back plate mounted on the substrate and in a spaced apart relationship with the diaphragm. The diaphragm is attached to the surface of the substrate along at least a portion of a periphery of the diaphragm. The diaphragm can include a silicon nitride insulating layer, and a conductive layer, that faces a conductive layer of the back plate. The MEMS transducer can include a peripheral support structure that is disposed between at least a portion of the diaphragm and the substrate. The diaphragm can include one or more pressure equalizing apertures.