A MEMS transducer package (300) comprises a package cover (313) comprising a first bonding region (316) and an integrated circuit die (319) comprising a second bonding region (314) for bonding with the first bonding region of the package cover. The integrated circuit die (309) comprises an integrated MEMS transducer (311) and integrated electronic circuitry (312) in electrical connection with the integrated MEMS transducer. The footprint of the integrated electronic circuitry (312) at least overlaps the bonding region (314) of the integrated circuit die (309).

The present disclosure provides a method for manufacturing a CMOS-MEMS structure. The method includes etching a cavity on a first surface of a cap substrate; bonding the first surface of the cap substrate with a sensing substrate; thinning a second surface of the sensing substrate, the second surface being opposite to a third surface of the sensing substrate bonded to the cap substrate; etching the second surface of the sensing substrate; patterning a portion of the second surface of the sensing substrate to form a plurality of bonding regions; depositing an eutectic metal layer on the plurality of bonding regions; etching a portion of the sensing substrate under the cavity to form a movable element; and bonding the sensing substrate to a CMOS substrate through the eutectic metal layer.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

This invention describes the structure and function of an integrated multi-sensing system. Integrated systems described herein may be configured to form a microphone, pressure sensor, gas sensor or accelerometer. The system uses Fabry-Perot Interferometer in conjunction with beam collimator, beam splitter, optical waveguide and a photodetector integrated. It also describes a configurable method for tuning the integrated system to specific resonance frequency using electrostatic actuators.

The invention relates to a simple to produce electric component for chips with sensitive component structures. Said component comprises a connection structure and a switching structure on the underside of the chip and a support substrate with at least one polymer layer.

A package includes a base structure, which has an electrically isolating material and/or an electrically conductive contact structure, an electronic component, which is embedded in the base structure or is arranged on the base structure, a microelectromechanical system (MEMS) component, and a cover structure, which is mounted on the base structure for at least partially covering the MEMS component.

The application relates to a MEMS transducer package comprising: a package substrate the package substrate comprising a substrate channel, the substrate channel comprising first and second channel portions, wherein the first portion extends in a first direction between a first channel opening in a side surface of the substrate and a junction between the first and second channel portions, and wherein the second portion extends in a second direction between said junction and a second channel opening at, or underlying, a substrate opening provided in an upper surface of the package substrate.

A display device capable of operating at high speed and with low power consumption is provided. A miniaturized display device occupying a small area is also provided. The display device includes a support; a display portion which includes a pixel; a light-blocking unit which is in the support and includes a light-blocking layer having a first opening overlapping with at least part of the pixel, and a movable light-blocking layer blocking light passing through the first opening; a transistor which is electrically connected to the light-blocking unit and includes an oxide semiconductor film; and a capacitor electrically connected to the transistor.

A micro electro-mechanical system (MEMS) device is provided. The MEMS device includes: a substrate having a first surface and a second surface and wherein the first surface is exposed to an environment outside the MEMS device; and a MEMS microphone disposed at a first location on the second surface of the substrate and having a diaphragm positioned such that acoustic waves received at the MEMS microphone are incident on the diaphragm. The MEMS device also includes: a first integrated circuit disposed at a second location of the substrate, wherein the first integrated circuit is electrically coupled to the MEMS microphone; and a MEMS measurement device at a third location, wherein the MEMS measurement device comprises a motion sensor and a pressure sensor.

A capped micromachined device has a movable micromachined structure in a first hermetic chamber and one or more interconnections in a second hermetic chamber that is hermetically isolated from the first hermetic chamber, and a barrier layer on its cap where the cap faces the first hermetic chamber, such that the first hermetic chamber is isolated from outgassing from the cap.