An integrated circuit assembly including a first wafer bonded to a second wafer with an oxide layer, wherein a first surface of the first wafer is bonded to a first surface of the second wafer. The assembly can include a bonding oxide on a second surface of the second wafer, wherein a surface of the bonding oxide is polished. The assembly can further include a shim secured to the bonding oxide on the second surface of the second wafer to reduce bow of the circuit assembly.

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The MEMS substrate comprises a moveable element arranged over a carrier substrate. The epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts overlies the epitaxial layer. A first subset of the plurality of contacts overlies the moveable element. The plurality of contacts respectively has an ohmic contact with the epitaxial layer.

A planer silicon-based displacement amplification structure and a method are provided for latching the displacement. The displacement amplification structure may include a first actuation beam and a second actuation beam coupled to the first beam with an angle, the ends of the first beam and the second beam coupled to fixture sites, and an end of the second beam coupled to a motion actuator; a motion shutter coupled to an opposing end of the first and second beams; and a latching thermoelectric displacement structure blocking the shutter return path and have faster response than the shutter structure.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A first cavity and a second cavity are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a first movable membrane overlying the first cavity and a second movable membrane overlying the second cavity. A first functional structure overlies the first movable membrane, where the first functional structure comprises a first material having a first chemical composition. A second functional structure overlies the second movable membrane, where the second functional structure is laterally spaced from the first functional structure, and where the second functional structure comprises a second material having a second chemical composition different than the first chemical composition.

Various embodiments of the present disclosure are directed towards an integrated chip including a capping structure over a device substrate. The device substrate includes a first microelectromechanical systems (MEMS) device and a second MEMS device laterally offset from the first MEMS device. The capping structure includes a first cavity overlying the first MEMS device and a second cavity overlying the second MEMS device. The first cavity has a first gas pressure and the second cavity has a second gas pressure different from the first cavity. An outgas layer abutting the first cavity. The outgas layer includes an outgas material having an outgas species. The outgas material is amorphous.

The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps to form a differential pressure sensor.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

A three-axis accelerometer measures acceleration in three axes by a single movable mass block, so that a more compact design of the three-axis accelerometer can be achieved. In addition, a plurality of detection capacitors, which forms differential capacitor pairs, are arranged in symmetric configuration with respect to a rotation axis of the movable mass block for sensing functions. Therefore, during sensing motion of a target axis direction, the all other unwanted capacitance changes in other axis direction may be cancelled.