A signal processing method and device of a MEMS microphone and a MEMS microphone are disclosed. The method comprises: acquiring a first electrical signal obtained by converting a received optical signal by an optical sensor disposed near a sound hole of the MEMS microphone; acquiring a second electrical signal output by the MEMS microphone; and judging that the second electrical signal is an interference signal when within a substantially overlapping time range, the first electrical signal acquired reaches a preset first threshold value and the second electrical signal acquired meets a preset condition.

In an embodiment, a semiconductor package includes a support and a stack of two or more semiconductor dies, the stack including an upper die and further including a lower die attached to the support by adhesive on a backside of the lower die, wherein the adhesive covers only part of the backside of the lower die, and wherein the adhesive has a plurality of non-contiguous regions on the backside of the lower die.

An inertial measurement unit includes: an inertial sensor module having a first inertial sensor and having an outer shape molded with a first resin; a component part; a second resin molding the inertial sensor module and the component part; and a metal provided between the first resin of the inertial sensor module and the second resin.

Electronic acoustic devices and methods of operating the same include a microphone having a frequency response including a resonance frequency, a reference microphone having a frequency response including a resonance frequency, the microphone and the reference microphone configured to substantially simultaneously receive a common acoustic signal to produce a transduced signal of the microphone and a transduced signal of the reference microphone, the resonance frequency of the reference microphone being different than the resonance frequency of the microphone, and an equalization module configured to equalize the frequency response of the microphone based on the transduced signal of the microphone and the transduced signal of the reference microphone.

A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.

Aspects of the subject technology relate to an apparatus including a housing and a substrate. The apparatus further includes a sensor, an integrated circuit mounted on the substrate, and one or more heating elements configured to adjust a temperature of the sensor to facilitate measurement of temperature sensitivity and calibration of the sensor.

A first electronic component, such as a sensor having opposed first and second surfaces and a first thickness, is arranged on a support member with the second surface facing towards the support member. A second electronic component, such as an integrated circuit mounted on a substrate and having a second thickness less than the first thickness, is arranged on the support member with a substrate surface opposed the second electronic component facing towards the support member. A package molding material is molded onto the support member to encapsulate the second electronic component while leaving exposed the first surface of the first electronic component. The support member is then removed to expose the second surface of the first electronic component and the substrate surface of the substrate.

A MEMS transducer package (1) comprises a semiconductor die element (3) and a cap element (23). The semiconductor die element (3) and cap element (23) have mating surfaces (9, 21). The semiconductor die element (3) and cap element (23) are configured such that when the semiconductor die element (3) and cap element (4) are conjoined, a first volume (7, 27) is formed through the semiconductor die element (3) and into the semiconductor cap element (23), and an acoustic channel is formed to provide an opening between a non-mating surface (11) of the semiconductor die element (3) and either a side surface (10, 12) of the transducer package or a non-mating surface (29) of the cap element (23).

A MEMS transducer package (1) comprises a semiconductor die element (3) and a cap element (23). The semiconductor die element (3) and cap element (23) have mating surfaces (9, 21). The semiconductor die element (3) and cap element (23) are configured such that when the semiconductor die element (3) and cap element (4) are conjoined, a first volume (7, 27) is formed through the semiconductor die element (3) and into the semiconductor cap element (23), and an acoustic channel is formed to provide an opening between a non-mating surface (11) of the semiconductor die element (3) and a side surface (10, 12) of the transducer package.

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.