A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Substrate is produced by using a MEMS technique to form multiple diaphragms in a substrate by forming piezoelectric material layer on one surface of the substrate and thereafter by forming openings in the substrate from the other surface of the substrate; substrate and substrate on which signal detection circuit is formed are aligned to each other using at least one of multiple diaphragms as alignment diaphragm; and substrate and substrate are bonded together.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.

A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.

An integrated device package is disclosed. The integrated device package can include a package housing that defines a cavity. The integrated device package can include an integrated device die that is disposed in the cavity. The integrated device die has a first surface includes a sensitive component. A second surface is free from a die attach material. The second surface is opposite the first surface. The integrated device die include a die cap that is bonded to the first surface. The integrated device package can also include a supporting structure that attaches the die cap to the package housing.

Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.

A device includes a complementary metal-oxide-semiconductor (CMOS) wafer and a conductive shielding layer. The CMOS wafer includes a semiconductor substrate, at least one front-end-of-the-line (FEOL) element, at least one back-end-of-the-line (BEOL) element and at least one dielectric layer. The FEOL element is disposed on the semiconductor substrate, the dielectric layer is disposed on the semiconductor substrate, and the BEOL element is disposed on the dielectric layer. The conductive shielding layer is disposed on the dielectric layer, in which the conductive shielding layer is electrically connected to the semiconductor substrate. an orthogonal projection of the conductive shielding layer on the semiconductor substrate does not overlap with an orthogonal projection of the FEOL element on the semiconductor substrate.

A complementary metal oxide semiconductor (CMOS) device integrated with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device heterogeneously. For example, a CMOS wafer with CMOS devices and interconnections as well as partially processed MEMS modules is bonded with a MEMS wafer with MEMS structures, post CMOS compatibility issues are alleviated. Post integration process to complete the devices includes forming contacts for interconnecting the sensors to the CMOS components as well as encapsulating the devices with a cap wafer using wafer-level vacuum packaging.

A MEMS phase shifter, including: a substrate; a coplanar waveguide signal structure on the substrate; two coplanar waveguide ground wires respectively at two sides of the coplanar waveguide signal structure; insulating isolation layers respectively on the two coplanar waveguide ground wires; and a metal film bridge across and over the coplanar waveguide signal structure and forming a gap with the coplanar waveguide signal structure, both ends of the metal film bridge respectively attached to the insulating isolation layers on the two coplanar waveguide ground wires, wherein an insulating dielectric layer is provided on the coplanar waveguide signal structure, and the insulating dielectric layer comprises at least one concave part, which is concave in the direction towards the substrate, on the surface facing the metal film bridge.

Described embodiments provide an electromechanical transducer including a mechanically compliant, elastically deformable array of dielectric shells. A first electrically conductive electrode is disposed on a first surface of the array. A second electrically conductive electrode is disposed on a second surface of the array, where the second surface opposes the first surface. The array is configured to be mechanically compliant and elastically deformable in response to one or more incident forces applied to the electromechanical transducer.