The present invention provides a MEMS microphone comprising (i) a substrate layer, (ii) a fixed backplate, and (iii) an intermediate layer sandwiched between the substrate layer and the fixed backplate. The substrate layer has a first opening through the thickness of the substrate layer. The intermediate layer has a second opening through the thickness of the intermediate layer. The fixed backplate forms a ceiling of the second opening, and the second opening is larger than the first opening and extends into the first opening, forming a looped recess (“undercut”). The looped recess is defined by a looped ledge on the substrate, a looped sidewall around the second opening, and a looped ceiling from the fixed backplate. The looped sidewall and the looped ceiling are made of a same material.

Disclosed herein is a MEMS sensor package that includes a substrate, an annular-shaped first dry film pattern stuck to one surface of the substrate, and a MEMS sensor chip including a tubular support and a detection part which is supported on the support so as to overlap a cavity of the support. The MEMS sensor chip is fixed to the substrate by sticking an annular mounting surface of the support to the first dry film pattern.

A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surface that is physically exposed to a respective vertically-extending cavity is formed in each of the at least one vertically-extending trench. A matrix material layer is attached to the MEMS support structure. A movable element laterally confined within a matrix layer is formed by patterning the matrix material layer. The matrix layer is bonded to the cap structure. A sealed chamber containing the movable element is formed. Each vertically-extending outgassing material portion has a surface that is physically exposed to the sealed chamber, and outgases a gas to increase the pressure in the sealed chamber.

Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

A method includes forming a front-end-of-the-line (FEOL) element over a substrate; forming a back-end-of-the-line (BEOL) element over the FEOL element; forming an interconnection structure over the substrate; forming a conductive shielding layer electrically connected to the interconnection structure and vertically overlapping the FEOL element and the BEOL element, wherein the conductive shielding layer is grounded to the substrate through the interconnection structure; and forming a dielectric layer covering the conductive shielding layer.

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

A MEMS phase shifter, including: a substrate; a coplanar waveguide signal structure on the substrate; two coplanar waveguide ground wires respectively at two sides of the coplanar waveguide signal structure; insulating isolation layers respectively on the two coplanar waveguide ground wires; and a metal film bridge across and over the coplanar waveguide signal structure and forming a gap with the coplanar waveguide signal structure, both ends of the metal film bridge respectively attached to the insulating isolation layers on the two coplanar waveguide ground wires, wherein an insulating dielectric layer is provided on the coplanar waveguide signal structure, and the insulating dielectric layer comprises at least one concave part, which is concave in the direction towards the substrate, on the surface facing the metal film bridge.

Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.

A CMOS-MEMS humidity sensor, comprising: a complementary metal oxide semiconductor (CMOS) ASIC readout circuit and a microelectromechanical system (MEMS) humidity sensor. The MEMS humidity sensor is provided on the ASIC readout circuit. The ASIC readout circuit comprises: a substrate, a heating resistor layer, a metal layer, and dielectric layers, the heating resistor layer being located above the substrate, the metal layer being located above the heating resistor layer, and the substrate, the heating resistor layer, and the metal layer being partitioned by dielectric layers. The MEMS humidity sensor comprises: an aluminum electrode layer, a passivation layer, and a humidity sensitive layer, the passivation layer being located above the aluminum electrode layer, and the humidity sensitive layer being located above the passivation layer. The provision of heating resistors in the ASIC circuit realizes the heating function and satisfies the requirements of the standard CMOS process, so that the CMOS-MEMS integrated humidity sensor can be used stably under low temperature and high humidity conditions.