B81B2207/053

MICROELECTROMECHANICAL DEVICE AND MICROELECTROMECHANICAL LOUDSPEAKER
20240425358 · 2024-12-26 ·

A microelectromechanical device for generating a fluid pressure. The microelectromechanical device includes a displacement structure, wherein the displacement structure has a movable membrane which can be deflected to generate the fluid pressure by means of a drivable connection structure acting on the membrane, and wherein the connection structure has a drive element and a deflection element connecting the membrane to the drive element. The deflection element has a lower flexural rigidity than the drive element and is elastically deformable when the membrane is deflected. A microelectromechanical loudspeaker having such a microelectromechanical device is also described.

ADAPTIVE CAVITY THICKNESS CONTROL FOR MICROMACHINED ULTRASONIC TRANSDUCER DEVICES
20240416385 · 2024-12-19 · ·

A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.

METHODS OF MANUFACTURE OF MEMS MIRROR ARRAYS WITH REDUCED CROSSTALK
20240417242 · 2024-12-19 · ·

A method of fabricating a microelectromechanical systems (MEMS) array includes forming a plurality of mirror structures on a first side of a substrate. The plurality of mirror structures includes a plurality of first mirror structures having a first resonant frequency and a plurality of second mirror structures having a second resonant frequency different from the first resonant frequency.

ACOUSTIC DETECTION SYSTEM AND METHOD AND ASSOCIATED KINETIC ENERGY HARVESTER
20240421728 · 2024-12-19 ·

An acoustic detection system and method and associated kinetic energy harvester is disclosed. The acoustic detection system comprises a vibration-generating object, a kinetic-energy harvester, and an acoustic sensor. The kinetic-energy harvester is embedded within a first location of the vibration-generation object and is configured to wirelessly transmit electrical power to the acoustic sensor, which is embedded within a second location of the vibration-generating object. The acoustic sensor is configured to receive the electrical power, detect acoustic signals, and convert the detected acoustic signals into acoustic data. The kinetic energy harvester may be an electromagnetic harvester that comprises a magnet array and a coil array comprising at least one conductive coil. By inducing a current in the at least one conductive coil through the relative motion between the magnet array and the coil array, the kinetic-energy harvester produces electrical power.

MEMS OPTICAL CIRCUIT SWITCH

MEMS optical circuit switches (OCS) are provided herein, which include novel structures and methods for (1) Alignment of the optical components (collimator array, micro-electromechanical systems (MEMS) mirror array, etc.) in a three-dimensional (3D) MEMS optical circuit switch OCS at the time of assembly or calibration; (2) Detection of the mechanical rotation angle of each MEMS mirror in a 3D MEMS OCS using strain sensors; (3) Monitoring and compensation of the long-term MEMS mirror rotation angle drift and system alignment drift of a 3D MEMS OCS; and (4) Fabrication and assembly of a 2-directional MEMS mirror with piezoelectric actuators.

MICROELECTROMECHANICAL SYSTEM (MEMS) ON APPLICATION SPECIFIC INTEGRATED CIRCUIT (ASIC)

In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

SYSTEM WITH AN INCREASED SURFACE DENSITY OF MICROELECTROMECHANICAL OR NANOELECTROMECHANICAL DEVICES

A nanoelectronic system comprised of n microelectromechanical or nanoelectromechanical devices arranged on a connection support to electrically connect the n devices, each device with an interaction area, at least one mechanical anchor and a first terminal, a second terminal and a third terminal, the relative arrangement of the first, second and third terminals, the anchor area and the interaction area being identical or similar for the n sensors, the first terminal of each device being intended to recover a signal emitted by each representative device of the interaction area state. At least part of the devices are arranged in such a way that the geometric location of the first terminal of one of the adjacent devices is identical to the geometric location of the first terminal of said other adjacent device, the first terminals being coincident.

Method for sealing cavities using membranes

A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

Semiconductor device and method for forming the same

The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Microelectromechanical system (MEMS) on application specific integrated circuit (ASIC)

In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.