Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

A nano-structure includes an outer area at an edge of the nano-structure. A width of the outer area defined by a distance from the edge of the nano-structure is less than 100 m. A depth of the nano-structure in the outer area changes gradually between 0% and at least 50% of a maximum depth of the nano-structure. A method includes forming an etch mask on a substrate and etching the substrate with the etch mask using an ion beam to form a nano-structure in the substrate. The etch mask includes an outer area near an edge of the etch mask. A width of the outer area defined by a distance from the edge of the etch mask is less than 100 m. A duty cycle of the etch mask in the outer area changes gradually between at least 10% and at least 90%.

A nano-structure includes an outer area at an edge of the nano-structure. A width of the outer area defined by a distance from the edge of the nano-structure is less than 100 m. A depth of the nano-structure in the outer area changes gradually between 0% and at least 50% of a maximum depth of the nano-structure. A method includes forming an etch mask on a substrate and etching the substrate with the etch mask using an ion beam to form a nano-structure in the substrate. The etch mask includes an outer area near an edge of the etch mask. A width of the outer area defined by a distance from the edge of the etch mask is less than 100 m. A duty cycle of the etch mask in the outer area changes gradually between at least 10% and at least 90%.

Provided are systems and methods for the post-treatment of dry adhesive microstructures. The microstructures may be post-treated to comprise mushroom-like flaps at their tips to interface with the contact surface. In some aspects, a change in material composition of the microstructures in a dry adhesive may affect mechanical properties to enhance or diminish overall adhesive performance. For example, conductive additives can be added to the material to improve adhesive performance. In other aspects, microstructures comprising conductive material may allow for preload engagement sensing systems to be integrated into the microstructures.

A MEMS package includes a MEMS chip, a package substrate which the MEMS chip is adhered and a thin-film filter which is adhered to the package substrate or the MEMS chip. The thin-film filter includes a thin-film part having a film surface and a rear film surface arranged a rear side of the film surface, and a plurality of through holes being formed to penetrate the thin-film part from the film surface to the rear film surface. The through holes are formed in an adhesive region of the thin-film part. The adhesive region is adhered to the package substrate or the MEMS chip.

There is provided a nanometric structure that includes a self-supporting nanometric material having a thickness of no more than about 5 nm. A plurality of nanopores is provided in the nanometric material, and the nanopore plurality has a density of at least about 1000 nanopores/cm.sup.2. Each nanopore in the plurality of nanopores has a diameter that is no greater than about 10 nm. The plurality of nanopores is monodisperse in diameter with a variation of about 30%. In a further nanometric structure provided herein there is included a self-supporting nanometric material having a thickness of no more than about 5 nm. A plurality of nanopores in the nanometric material includes at least about 50 nanopores. Each nanopore in the plurality of nanopores has a diameter that is no greater than about 10 nm. The plurality of nanopores is monodisperse in diameter with a variation of about 30%.

A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.

A method for fabrication of free standing mechanical and photonic structures is presented. A resist mask is applied to a bulk substrate. The bulk substrate is attached to a movable platform. The bulk substrate is exposed to an ion stream produced by a reactive ion beam etching source. The platform is moved relative to the ion stream to facilitate undercutting a portion of the bulk substrate otherwise shielded by the mask.