A microelectromechanical system includes a membrane of amorphous carbon having a thickness between 1 nm and 50 nm, and for example between 3 nm and 20 nm.

A micro-electromechanical system (MEMS) device includes a silicon substrate; and a Tantalum (Ta) layer comprising a first portion and a second portion, a first portion being suspended over the silicon substrate and configured to move relative to the silicon substrate, and the second portion of the structure being coupled to the silicon substrate and fixed in place relative to the silicon substrate. MEMS devices including accelerometers, gyroscopes, microphones, etc. can be fabricated in which Ta forms the structure material of the MEMS components on a chip. The Ta and integrated circuit (IC) can be fabricated together in a single package in which the MEMS structure is able to use the full area above the IC in the package.

The present invention discloses a package assembly of a sensor, comprising: a redistribution layer comprising a first face and a second face opposite to each other; a first die electrically connected to the first face of the redistribution layer; a molding compound comprising a third face and a fourth face opposite to each other, wherein the third face of the molding compound is combined with the first face of the redistribution layer, and the molding compound encapsulates the first die on the side of the first face of the redistribution layer; and a sensing element electrically connected to the redistribution layer. The package assembly of the sensor allows more elements to be packaged together, and provides a better structural support or provides a better heat distribution for the package assembly, and at the same time, reduces the volume and costs of the entire package assembly.

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.

A system for compensating for thermal stress in piezoelectric microelectromechanical systems devices can have a piezoelectric layer at least partially spanning a cavity such that it generates electrical signals when external forces cause the piezoelectric layer to vibrate with respect to the cavity. At least one electrode layer can include a conductive metal positioned adjacent the piezoelectric layer and configured as an electrode to accept the electrical signals. The piezoelectric layer and electrode layer can have an expected thermal stress tending to cause expected deflection even when external forces are not causing the piezoelectric layer to vibrate. A compensation layer can be positioned adjacent at least one of the piezoelectric layer and the at least one electrode layer and configured to counteract the expected deflection from the expected thermal stress.

A sensing module, a semiconductor device package and a method of manufacturing the same are provided. The sensing module includes a sensing device, a first protection film and a second protection film. The sensing device has an active surface and a sensing region disposed adjacent to the active surface of the sensing device. The first protection film is disposed on the active surface of the sensing device and fully covers the sensing region. The second protection film is in contact with the first protection film and the active surface of the sensing device.

A micromechanical component for a sensor device including a substrate having a substrate surface, at least one stator electrode situated on the substrate surface and/or on the at least one intermediate layer covering at least partially the substrate surface, which is formed in each case from a first semiconductor and/or metal layer, at least one adjustably situated actuator electrode, which is formed in each case from a second semiconductor and/or metal layer, and a diaphragm spanning the at least one stator electrode and the at least one actuator electrode, including a diaphragm exterior side directed away from the at least one stator electrode, which is formed from a third semiconductor and/or metal layer, a stiffening and/or protective structure protruding at the diaphragm exterior side being formed from a fourth semiconductor and/or metal layer.

Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) device. The method includes forming a filter stack over a carrier substrate. The filter stack comprises a particle filter layer having a particle filter. A support structure layer is formed over the filter stack. The support structure layer is patterned to define a support structure in the support structure layer such that the support structure has one or more segments. The support structure is bonded to a MEMS structure.

A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.

A sensing module, a semiconductor device package and a method of manufacturing the same are provided. The sensing module includes a sensing device, a first protection film and a second protection film. The sensing device has an active surface and a sensing region disposed adjacent to the active surface of the sensing device. The first protection film is disposed on the active surface of the sensing device and fully covers the sensing region. The second protection film is in contact with the first protection film and the active surface of the sensing device.