A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

A microelectromechanical system includes a membrane of amorphous carbon having a thickness between 1 nm and 50 nm, and for example between 3 nm and 20 nm.

An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon the first layer, wherein the second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon the second layer, wherein the third layer is a functional organic-comprising layer, wherein the functional organic-comprising layer is a SAM.

A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die includes a first device layer formed from glass materials. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

In some embodiments, a microelectromechanical system may include a semiconductor substrate, a plurality of wiring layers, and a stop. The plurality of wiring layers may be coupled to a first surface of the semiconductor substrate. The stop may be coupled to the plurality of wiring layers. In some embodiments, at least a portion of the plurality of wiring layers between the stop and the first surface of the substrate comprises an insulating material. In some embodiments, at least the portion excludes wiring within. In some embodiments, a volume of the portion may be determined by a use of the microelectromechanical system. In some embodiments, the portion may inhibit, during use, electrical failures adjacent to the stop.

A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

In some embodiments, a microelectromechanical system may include a semiconductor substrate, a plurality of wiring layers, and a stop. The plurality of wiring layers may be coupled to a first surface of the semiconductor substrate. The stop may be coupled to the plurality of wiring layers. In some embodiments, at least a portion of the plurality of wiring layers between the stop and the first surface of the substrate comprises an insulating material. In some embodiments, at least the portion excludes wiring within. In some embodiments, a volume of the portion may be determined by a use of the microelectromechanical system. In some embodiments, the portion may inhibit, during use, electrical failures adjacent to the stop.

In some embodiments, a microelectromechanical system may include a semiconductor substrate, a plurality of wiring layers, and a stop. The plurality of wiring layers may be coupled to a first surface of the semiconductor substrate. The stop may be coupled to the plurality of wiring layers. In some embodiments, at least a portion of the plurality of wiring layers between the stop and the first surface of the substrate comprises an insulating material. In some embodiments, at least the portion excludes wiring within. In some embodiments, a volume of the portion may be determined by a use of the microelectromechanical system. In some embodiments, the portion may inhibit, during use, electrical failures adjacent to the stop.