An electronic device includes a capacitor and a passivation layer covering the capacitor. The capacitor includes a first electrode, a dielectric layer disposed over the first electrode and a second electrode disposed over the dielectric layer. An area of the first electrode is greater than an area of the dielectric layer, and the area of the dielectric layer is greater than an area of the second electrode so that a side of the capacitor has a multi-step structure.

Methods of manufacturing a 3D micro-scale structure. A 2D net including a plurality of panels and a plurality of hinges is provided. The panels are arranged in a pattern. The hinges interconnect immediately adjacent ones of the panels within the pattern. An energy source remote from the 2D net is powered to deliver energy to the 2D net. The delivered energy triggers the 2D net to self-fold into a 3D micro-scale structure. The delivered energy creates an eddy current within at least one component of the 2D net, with the eddy current generating heat sufficient to melt at least one of the hinges. The melting hinge causes the corresponding panels to fold or pivot relative to one another. In some embodiments, the energy source is a microwave energy source. In other embodiments, the energy source delivers a magnetic field.

A radio frequency micro-electromechanical switch (generally referred to using the acronyms RF MEMS) is described. Also described is a method of producing such an RF MEMS switch.

A microelectromechanical structure including a first wafer structure attached by bonding to a second wafer structure. The first wafer structure includes a build part of silicon wafer material, a through via, and an isolation structure separating the through via from the build part. The through via extends between a first electrical contact and a second electrical contact through the first wafer structure in a first direction. The first electrical contact of the first wafer structure is accessible externally and the second electrical contact of the first wafer structure connects to an internal electrical contact on the second wafer structure. In the first direction, the extent of the isolation structure includes a hollow section and a via fill section where the isolation structure is filled with solid electrically insulating material. enables considerable increase of gap height in MEMS structures.

Methods, systems, computer-readable media, and apparatuses for high density Micro-Electro-Mechanical Systems (MEMS) are presented. In some embodiments, a method for manufacturing a micro-electro-mechanical device on a substrate can comprise etching a release via through a layer of the device. The method can further comprise creating a cavity in the layer of the device using the release via as a conduit to access the desired location of the cavity, the cavity enabling movement of a transducer of the device. The method can then comprise depositing low impedance, electrically conductive material into the release via to form an electrically conductive path through the layer. Finally, the method can comprise electrically coupling the electrically conductive material to an electrode of the transducer.

Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

A process for fabricating a symmetrical MEMS accelerometer. A pair of half parts is fabricated by, for each half part: (i) forming a plurality of resilient beams, first connecting parts, second connecting parts, and a plurality of comb structures, by etching a plurality of holes on a bottom surface of a first silicon wafer; (ii) etching a plurality of hollowed parts on a top surface of a second silicon wafer; (iii) forming a silicon dioxide layer on the top and bottom surface of the second silicon wafer; (iv) bonding the bottom surface of the first silicon wafer with the top surface of the second silicon wafer; (v) depositing a layer of silicon nitride on the bottom surface of the second silicon wafer, and removing parts of the silicon nitride layer and silicon dioxide layer on the bottom surface of the second silicon wafer; (vii) deep etching the exposed parts of the bottom surface of the second silicon wafer to the silicon dioxide layer located on the top surface of the second silicon wafer, and reducing the thickness of the first silicon wafer; and (viii) removing the silicon nitride layer, and etching the silicon dioxide to form the mass. The two half parts are then bonded along their bottom surface. The device is deep etched to form a movable accelerometer. A bottom cap is fabricated by hollowing out the corresponding area, and depositing metal as electrodes. The accelerometer is bonded with the bottom cap. Metal is deposited on the first silicon wafer to form electrodes.

A supply system for an extreme ultraviolet (EUV) light source includes an apparatus configured to be fluidly coupled to a reservoir configured to contain target material that produces EUV light in a plasma state, the apparatus including two or more target formation units, each one of the target formation units including: a nozzle structure configured to receive the target material from the reservoir, the nozzle structure including an orifice configured to emit the target material to a plasma formation location. The supply system further includes a control system configured to select a particular one of the target formation units for emitting the target material to the plasma formation location. An apparatus for a supply system of an extreme ultraviolet (EUV) light source includes a MEMS system fabricated in a semiconductor device fabrication technology, and the MEMS system including a nozzle structure configured to be fluidly coupled to a reservoir.

Systems and methods for fabricating 3D soft microstructures. The system comprises injecting a pressurized, curable liquid into certain structural layers induces folding and allows the 2D structures to reconfigure into a 3D form In addition to the injection of a curable liquid that permanently reconfigures the structure of the system, in an embodiment this method also allows for the injection of other liquids into certain actuator layers that enable motion in certain portions of the system Furthermore, the system allows for handling of colored fluids that are passed to visualization layers. The method of creating such a system depends on taking advantage of laser machining of the individual layers to influence the behavior of how different portions bend and move.

An electronic device includes a capacitor and a passivation layer covering the capacitor. The capacitor includes a first electrode, a dielectric layer disposed over the first electrode and a second electrode disposed over the dielectric layer. An area of the first electrode is greater than an area of the dielectric layer, and the area of the dielectric layer is greater than an area of the second electrode so that a side of the capacitor has a multi-step structure.