Patent classifications
B81C1/00134
MEMS Devices and Methods of Forming the Same
A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
MICROMACHINED MULTI-AXIS GYROSCOPES WITH REDUCED STRESS SENSITIVITY
In a general aspect, a micromachined gyroscope can include a substrate and a static mass suspended in an x-y plane over the substrate by a plurality of anchors attached to the substrate. The static mass can be attached to the anchors by anchor suspension flexures. The micromachined gyroscope can include a dynamic mass surrounding the static mass and suspended from the static mass by one or more gyroscope suspension flexures.
Methods of forming micro-electro-mechanical devices including a conductive feature extending through an escort ring
A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
Microelectromechanical system device
A microelectromechanical system (MEMS) device includes a processing die, a MEMS die and a plurality of wires. The MEMS die includes a substrate and a MEMS element. The substrate has a first surface, and the first surface includes a circuit and a plurality of first conductive contacts electrically connected with the circuit. The MEMS element has a second surface, a third surface and at least one second conductive contact, wherein the MEMS element is disposed on the first surface of the substrate with the second surface facing the substrate, and the at least one second conductive contact is disposed on the third surface of the MEMS element. The wires electrically connect the substrate and the MEMS element of the MEMS die to the processing die through the first conductive contacts and the second conductive contact respectively.
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
MEMS structure including a cap with a via
A microelectromechanical structure including a first wafer structure attached by bonding to a second wafer structure. The first wafer structure includes a build part of silicon wafer material, a through via, and an isolation structure separating the through via from the build part. The through via extends between a first electrical contact and a second electrical contact through the first wafer structure in a first direction. The first electrical contact of the first wafer structure is accessible externally and the second electrical contact of the first wafer structure connects to an internal electrical contact on the second wafer structure. In the first direction, the extent of the isolation structure includes a hollow section and a via fill section where the isolation structure is filled with solid electrically insulating material. enables considerable increase of gap height in MEMS structures.
MEMS DEVICE AND ELECTRONIC APPARATUS
The present invention discloses a MEMS device and electronic apparatus. The MEMS device comprises: a micro-LED; and a movable member, wherein the micro-LED is mounted on the movable member and is configured for moving with the movable member. According to an embodiment of this invention, the signal detection of a MEMS device can be simplified and/or the contents of signals produced by the MEMS device can be enriched.
Versatile, Flexible And Biocompatible Elastomeric Microtubes
The present invention relates to a flexible polymer-based microtube having an inner diameter of about 4 ?m to about 1000 ?m and a variable outer diameter, wherein the cross-sectional shape of the microtube can be, for instance, circular, rectangular, square, triangular, elliptical, star or irregular. The present invention also relates to a method of making the flexible microtube and devices incorporating the flexible microtube.
METHOD OF MANUFACTURING MEMS DEVICE AND MEMS DEVICE
Provided is a method of manufacturing a MEMS device including forming, in a metal layer, an opening that enables a first space and a second space to communicate with each other by exposing the metal layer to an etching solution in a state where the metal layer is left at a boundary between the first space and the second space, and covering an inner surface of an opening of each of an adhesive layer and the metal layer by forming a protective layer from an inner surface of the first space to an inner surface of the second space after the opening of the metal layer is formed.