A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

A MEMS device is formed by a body of semiconductor material which defines a support structure. A pass-through cavity in the body is surrounded by the support structure. A movable structure is suspended in the pass-through cavity. An elastic structure extends in the pass-through cavity between the support structure and the movable structure. The elastic structure has a first and second portions and is subject, in use, to mechanical stress. The MEMS device is further formed by a metal region, which extends on the first portion of the elastic structure, and by a buried cavity in the elastic structure. The buried cavity extends between the first and the second portions of the elastic structure.

A pressure sensor includes a first electrode, a plurality of cavities, and a second electrode. The second electrode is disposed opposite the first electrode through the plurality of cavities. The second electrode includes a flat structure spanning two adjacent cavities of the plurality of cavities.

A MEMS device includes a layer stack having a plurality of MEMS layers arranged along a layer stack direction. The MEMS device includes a movable element formed in a first MEMS layer and arranged between a second MEMS layer and a third MEMS layer of the layer stack. A driving unit is further provided, comprising a first drive structure mechanically firmly connected to the movable element and a second drive structure mechanically firmly connected to the second MEMS layer. The driving unit is configured to generate on the movable member a drive force perpendicular to the layer stack direction, and the drive force is configured to deflect the movable member.

There is provided a micro-electromechanical system (MEMS) device (102, 200, 300, 404) for cancelling noise generated by oscillation of a movable micro-electromechanical system (MEMS) element (104, 204, 304, 406). The micro-electromechanical system (MEMS) device (102, 200, 300, 404) includes the movable micro-electromechanical system (MEMS) element (104, 204, 304, 406), an actuator (106, 208, 306, 408), a controller (108, 410) and a movable noise cancelling element (110, 202, 312, 412). The controller (108, 410) provides electrical signals to drive the actuator (106, 208, 306, 408) and the movable noise cancelling element (110, 202, 312, 412) in a way to cancel the noise generated in the micro-electromechanical system (MEMS) device (102, 200, 300, 404) by oscillation of the movable MEMS element (104, 204, 304, 406). The movable noise-cancelling element (110, 202, 312, 412) produces anti-phase noise based on the electrical signals received from the controller (108, 410) to cancel noise caused by oscillation of the movable MEMS element (104, 204, 304, 406) based on the control signals received from the controller (108, 410).

A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.

Disclosed is a force transfer device that includes a first body that has a first body frame that defines a first chamber and at least one gear element. The gear element has a central gear element region. A first membrane is affixed to a surface of the first body frame, the membrane covering the chamber and having an annular aperture enclosing a central region of the membrane that is affixed to the central gear element region of the gear element. The disclosed force transfer device can be axle or shaft based. Also disclosed in a micro electrostatic motor that includes a motor body having a first and a second face, the motor body defining a chamber and a rotor having a central region. A membrane is disposed over the first face of the motor body, the membrane supporting a pair of spaced electrodes that are electrically isolated by a gap, the membrane having an annular aperture that defines a central region of the membrane that is coupled to the central region of the rotor. The force transfer device can be driven by the electrostatic motor.

A display device and a display method thereof, and a display equipment are disclosed. The display device includes a display panel and a light transmittance adjusting layer, the display panel includes a plurality of pixel regions, the light transmittance adjusting layer is stacked with the display panel, and the light transmittance adjusting layer is configured to adjust display brightness of the plurality of pixel regions.

Embodiments of the disclosure provide a micromachined mirror assembly having a mirror-base layer, a first reflective layer on a top surface of the mirror-base layer, and a second reflective layer on a bottom surface of the mirror-base layer. In an example, the first reflective layer is reflective to incident light of the micromachined mirror assembly, and the first reflective layer and the second reflective layer are made of a same material and have same dimensions.

A micromechanical z-inertial sensor, having a movable MEMS structure developed in a micromechanical function layer; a torsion spring connected to the movable MEMS structure; and a spring device connected to the torsion spring, the spring device being developed to hamper a deflection of the torsion spring orthogonal to a sensing direction of the MEMS structure in a defined manner.