Method of manufacturing a microfluidic device comprising an inflexible polymeric substrate, one or more flexible polymeric substrate(s) and one or more microfluidic channel(s) enclosed between the substrates comprising a) providing a master form including rim protrusions defining an enveloping shape for the microfluidic channel(s) to be produced and enclosed between the substrates, b) placing one or more flexible polymeric substrate(s) each having a layer thickness of less than 800 m onto the master form, wherein one flexible polymeric substrate is in contact with the rim protrusions of the master form, c) placing an inflexible polymeric substrate with a layer thickness of equal to or more than 800 m onto the flexible polymeric substrate(s), and d) ultrasonically welding the one or more flexible polymeric substrate(s) and the inflexible polymeric substrate at the rim protrusions. By the inventive method microfluidic devices via ultrasonic welding without using energy directors can be obtained.

Systems and methods for fabricating 3D soft microstructures. The system comprises injecting a pressurized, curable liquid into certain structural layers induces folding and allows the 2D structures to reconfigure into a 3D form In addition to the injection of a curable liquid that permanently reconfigures the structure of the system, in an embodiment this method also allows for the injection of other liquids into certain actuator layers that enable motion in certain portions of the system Furthermore, the system allows for handling of colored fluids that are passed to visualization layers. The method of creating such a system depends on taking advantage of laser machining of the individual layers to influence the behavior of how different portions bend and move.

A method for bonding at least three substrates to form a substrate stack, wherein the substrate stack has at least one lowermost substrate a middle substrate, and an upper substrate. The method includes the following steps: aligning the middle substrate to the lowermost substrate and bonding the middle substrate to the lowermost substrate, then aligning the upper substrate and bonding the upper substrate to the middle substrate, wherein the upper substrate is aligned to the lowermost substrate.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

A process for fabricating a symmetrical MEMS accelerometer. A pair of half parts is fabricated by, for each half part: (i) forming a plurality of resilient beams, first connecting parts, second connecting parts, and a plurality of comb structures, by etching a plurality of holes on a bottom surface of a first silicon wafer; (ii) etching a plurality of hollowed parts on a top surface of a second silicon wafer; (iii) forming a silicon dioxide layer on the top and bottom surface of the second silicon wafer; (iv) bonding the bottom surface of the first silicon wafer with the top surface of the second silicon wafer; (v) depositing a layer of silicon nitride on the bottom surface of the second silicon wafer, and removing parts of the silicon nitride layer and silicon dioxide layer on the bottom surface of the second silicon wafer; (vii) deep etching the exposed parts of the bottom surface of the second silicon wafer to the silicon dioxide layer located on the top surface of the second silicon wafer, and reducing the thickness of the first silicon wafer; and (viii) removing the silicon nitride layer, and etching the silicon dioxide to form the mass. The two half parts are then bonded along their bottom surface. The device is deep etched to form a movable accelerometer. A bottom cap is fabricated by hollowing out the corresponding area, and depositing metal as electrodes. The accelerometer is bonded with the bottom cap. Metal is deposited on the first silicon wafer to form electrodes.

The present invention has as its object the provision of a method of bonding substrates, which can bond two substrates, at least one of which has warpage and undulation of a bonding surface, in a high adhesion state and a method of producing a microchip. In the method of bonding substrates according to the present invention, the first substrate is formed of a material having a deformable temperature at which the substrate deforms and which is higher than a deformable temperature of the second substrate, the method includes: a surface activation step of activating each of bonding surfaces of the first substrate and the second substrate; a stacking step of stacking the first substrate and the second substrate so that the respective bonding surfaces thereof are in contact with each other; and a deforming step of deforming the bonding surface of the second substrate to conform to a shape of the bonding surface of the first substrate, and the deforming step is performed by heating the stacked body of the first substrate and the second substrate obtained in the stacking step at a temperature not lower than the deformable temperature of the second substrate and lower than the deformable temperature of the first substrate.

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH.sub.2 species. This may be accomplished by exposing the bonding layer to an NH.sub.4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH.sub.2 species. This may be accomplished by exposing the bonding layer to an NH.sub.4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

A method of manufacturing a semiconductor device includes providing a semiconductor structure having a bottom substrate, a sacrificial layer on the bottom substrate, and a top substrate on the sacrificial layer. The sacrificial layer has a first opening exposing a first portion of the bottom substrate and a second opening exposing a second portion of the bottom substrate. The method further includes forming a first metal layer on the top substrate and/or on the exposed first portion of the bottom substrate, forming an adhesive layer on the first metal layer, and forming a second metal layer on the adhesive layer defining one or more pads.

A multi-layer, stress-isolation platform configured for attaching a MEMS die to a base includes a first platform, a first layer of attachment material between the base and the first platform and attaching the first platform to the base, a MEMS die, and a second layer of attachment material between the first platform and the MEMS die and attaching the MEMS die to the first platform.