A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

Microelectromechanical system are disclosed that include at least one electrode, microelectrode or combination thereof, wherein the at least one electrode comprises a carbon material, a glassy carbon material or a combination thereof. Contemplated systems are suitable for μ-ECoG arrays. Additional microelectromechanical systems are disclosed that include at least one electrode, microelectrode or combination thereof, wherein the at least one electrode comprises a carbon material, a glassy carbon material or a combination thereof; at least one substrate, surface, layer or a combination thereof, wherein the at least one electrode, microelectrode or combination thereof is disposed on, coupled with or otherwise layered on the at least one substrate, surface, layer or a combination thereof; and at least one bump pad, wherein the at least one electrode, microelectrode or combination thereof is coupled with the at least one bump pad via at least one conductive metal. A method of making a microelectromechanical system includes patterning a polymer precursor, a carbon-containing material or a combination thereof onto a surface, a substrate, at least one layer or a combination thereof; and heating or pyrolysing the polymer precursor, a carbon-containing material or a combination thereof in order to form a glassy carbon material. Uses of microelectromechanical systems are also contemplated to measure at least one electrical property in a mammal or for electrocorticography.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

An actuator includes a diaphragm, a lower electrode on the diaphragm, an electromechanical transducer film on the lower electrode, and an upper electrode on the electromechanical transducer film. The diaphragm includes a first silicon oxide film having a thickness of 0.5 m or more, a silicon layer on the first silicon oxide film, a thickness of which is 3 m or more, and a second silicon oxide film on the silicon layer, a thickness of which is 0.5 m or more. A volume resistivity of the silicon layer is 10.sup.3 .Math.cm or more and 10.sup.6 .Math.cm or less.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.