A highly-ordered nano-structure array, formed on a substrate, mainly comprises a plurality of highly-ordered nano-structure units. Each of the highly-ordered nano-structure units forms a receiving compartment. One end of the receiving compartment opposite to the substrate has an opening. Each of the highly-ordered nano-structure units comprises at least one thin film layer. A periphery and a bottom of the receiving compartment are defined by an inner surface of a surrounding portion of the at least one thin film layer and a top surface of a bottom portion of the at least one thin film layer, respectively. The at least one thin film layer is made of at least one material selected from the group consisting of: metal, alloy, oxide, nitride, and sulfide.

A stacked structure includes a polymer layer and a metal layer. The metal layer is disposed on the polymer layer. A burr length on a surface of the polymer layer is about 0.8 μm to about 150 μm, and a burr length on a surface of the metal layer is about 0.8 μm to about 7 μm.

The present invention relates to a method for manufacturing a nanoparticle array, a surface plasmon resonance-based sensor, and a method for analyzing using the same. According to one embodiment of the present invention, after a mixed solution of an ionized binder and conductive nanoparticles is prepared, a substrate is dipped into the mixed solution. Thereafter, by applying an electric field to the mixed solution into which the substrate is dipped so as to induce coating of the conductive nanoparticles on the substrate, it is possible to manufacture, by a wet method, a nanoparticle array in which the conductive nanoparticles are quickly coated on the substrate with high density.

An actuator element of a MEMS device on a substrate is provided to create large, out-of-plane deflection. The actuator element includes a metallic layer having a first portion contacting the substrate and a second portion having an end proximal to the first portion. A distal end is cantilevered over the substrate. A first insulating layer contacts the metallic layer on a bottom contacting surface of the second cantilevered portion from the proximal to the distal end. A second insulating layer contacts the metallic layer on a portion of a top contacting surface at the distal end. The second portion of the metallic layer is prestressed. A coefficient of thermal expansion of the first and second insulating layers is different than a coefficient of thermal expansion of the metallic layer. And, a Young's modulus of the first and second insulating layer is different than a Young's modulus of the metallic layer.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.

Imprinted substrates are often used to produce miniaturized devices for use in electrical, optic and biochemical applications. Imprinting techniques, such as nanoimprinting lithography, may leave residues in the surface of substrates that affect bonding and decrease the quality of the produced devices. An imprinted substrate with residue-free region, or regions with a reduced amount of residue for improved bonding quality is introduced. Methods to produce imprinted substrates without residues from the imprinting process are also introduced. Methods include physical exclusion methods, selective etching methods and energy application methods. These methods may produce residue-free regions in the surface of the substrate that can be used to produce higher strength bonding.

The present application relates to a laminate, a method for preparing same and a use of the laminate. The present application can provide a method for forming a film, which comprises a self-assembled block copolymer, to have excellent uniformity in thickness even when the film is formed over a large area, a laminate comprising a polymer film formed by means of the method, and a use of same.

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

Imprinted substrates are often used to produce miniaturized devices for use in electrical, optic and biochemical applications. Imprinting techniques, such as nanoimprinting lithography, may leave residues in the surface of substrates that affect bonding and decrease the quality of the produced devices. An imprinted substrate with residue-free region, or regions with a reduced amount of residue for improved bonding quality is introduced. Methods to produce imprinted substrates without residues from the imprinting process are also introduced. Methods include physical exclusion methods, selective etching methods and energy application methods. These methods may produce residue-free regions in the surface of the substrate that can be used to produce higher strength bonding.