A stacked structure includes a polymer layer and a metal layer. The metal layer is disposed on the polymer layer. A burr length on a surface of the polymer layer is about 0.8 m to about 150 m, and a burr length on a surface of the metal layer is about 0.8 m to about 7 m.

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).

A micro-electro-mechanical systems (MEMS) device and method of fabricating the MEMS device are disclosed. The MEMS device comprises a substrate, one or more suspension structures connected to the substrate, one or more metallized layers on the one or more suspension structures, and one or more sense structures connected to the one or more suspension structures. The one or more metallized layers provide selectively adjusted damping of the one or more suspension structures.

A method of post-processing an actuator element is presented. The method begins by receiving a fabricated actuator element including a metallic layer contacting a substrate, sacrificial layer proximate the metallic layer, and a first dielectric layer on the sacrificial layer. The metallic layer has an end proximal to and contacting at least part of the substrate and a distal end extending over the first dielectric layer. A second dielectric is deposited on a portion of the metallic layer at the distal end. And, the sacrificial layer is removed.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.

A shadow mask having two or more levels of openings enables selective step coverage of micro-fabricated structures within a micro-optical bench device. The shadow mask includes a first opening within a top surface of the shadow mask and a second opening within the bottom surface of the shadow mask. The second opening is aligned with the first opening and has a second width less than a first width of the first opening. An overlap between the first opening and the second opening forms a hole within the shadow mask through which selective coating of micro-fabricated structures within the micro-optical bench device may occur.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a device includes a substrate, a titanium nitride diffusion barrier layer formed upon the substrate, a titanium layer formed upon the titanium nitride diffusion barrier layer, a platinum seed layer, and a cobalt-platinum magnetic layer formed upon the platinum seed layer. Based in part on the use of the titanium nitride diffusion barrier layer and/or the platinum seed layer, improvements in the interfaces between the layers can be achieved after annealing, with less delamination, and with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer. Further, the cobalt-platinum magnetic layer can be formed at a relatively thin thickness of hundreds of nanometers to a few microns while still maintaining good magnetic properties.

An actuator element of a MEMS device on a substrate is provided to create large, out-of-plane deflection. The actuator element includes a metallic layer having a first portion contacting the substrate and a second portion having an end proximal to the first portion. A distal end is cantilevered over the substrate. A first insulating layer contacts the metallic layer on a bottom contacting surface of the second cantilevered portion from the proximal to the distal end. A second insulating layer contacts the metallic layer on a portion of a top contacting surface at the distal end. The second portion of the metallic layer is prestressed. A coefficient of thermal expansion of the first and second insulating layers is different than a coefficient of thermal expansion of the metallic layer. And, a Young's modulus of the first and second insulating layer is different than a Young's modulus of the metallic layer.