Provided are sensor elements and a method of manufacturing the same. The sensor element includes a die, an active part including a frame surrounded by the die, a first trench disposed between the die and the active part, and a bridge connecting the die and the frame and a second trench being formed in the bridge, whereby electrical connection from the active part to an electrode pad may be secured and transfer of external stress to the active part may be significantly reduced through the second trench.

A method for producing a first and second micromirror device. A silicon oxide layer is applied to at least the front side of a silicon wafer. The silicon oxide layer is removed so that a first and second separation region of the silicon oxide layer are generated, which are arranged spatially separated from each other along a separation plane. A silicon layer is applied to the front side of the silicon wafer and to the silicon oxide layer. An etching mask is applied to the rear side of the silicon wafer, the etching mask having a first opening along the separation plane of the first and second separation region. The silicon layer and the silicon wafer are removed, according to the etching mask on the rear side of the silicon wafer and according to the silicon oxide layer of the first and second separation region.

According to an implementation, a method for manufacturing a microelectromechanical system mirror device is provided. A mirror portion of the mirror device is rotatable about a first axis having an associated first resonance frequency and a second axis different from the first axis and having an associated second resonance frequency. The method includes estimating a deviation of a first geometry parameter of the mirror device from a reference value, and adjusting a manufacturing step for the mirror device to modify a second geometry parameter of the mirror device different from the first geometry parameter such that a variation of a frequency ratio between the first resonance frequency and the second resonance frequency caused by the deviation of the first geometry parameter and the modifying of the second geometry parameter is below a predefined threshold.