The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming Si.sub.xO.sub.y?.sub.z; wherein a is any one of F, Cl, H, and C.sub.kH.sub.l; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro sensors are selectively exposed such that a sensing layer of a micro sensor is protected by a mask layer during active operation of another micro sensor, and the protective mask layer may be removed to expose the sensing layer when the other micro sensor reaches an end-of-life. Other embodiments are also described and claimed.

Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro sensors are selectively exposed such that a sensing layer of a micro sensor is protected by a mask layer during active operation of another micro sensor, and the protective mask layer may be removed to expose the sensing layer when the other micro sensor reaches an end-of-life. Other embodiments are also described and claimed.

A method for manufacturing a micromechanical structure in the structural layer of a wafer by forming a first gap and a second gap depositing and patterning a first etching mask and a second etching mask on a horizontal face of the structural layer, etching trenches through the structural layer in the first and second unprotected areas which are not protected by the first etching mask or the second etching mask, coating at least the sidewalls of the trenches with a protective layer and removing the second etching mask at least from a second opening in the first etching mask, so that a temporarily protected area is exposed, and etching away the structural layer in the exposed temporarily protected area.

A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

One or more photonic structures are formed within one or more layers over a surface of a substrate, and multiple trenches are formed through the one or more layers housing devices coupled to one or more of the photonic structures. The trenches may include: a first trench that has a bottom surface within the substrate that has a first surface topology characterized by a first surface roughness at a first depth within the substrate relative to the surface of the substrate, and a second trench that has a bottom surface within the substrate that has a second surface topology characterized by a second surface roughness at a second depth within the substrate relative to the surface of the substrate. The first surface roughness may be greater than the second surface roughness, and the second depth may be greater than the first depth.

A method creates MEMS structures by selectively etching a silicon wafer that is patterned by using a masking layer. The method comprises depositing and patterning a first mask on a silicon wafer to define desired first areas on the wafer to be etched. First trenches are etched on parts of the wafer not covered by the first mask. The first trenches are filled with a deposit layer. A part of the deposit layer is removed on desired second areas to be etched and a remainder is left on areas to function as a second mask to define final structures. Parts of the wafer on the desired second areas is etched, and the second mask is removed. A gyroscope or accelerator can be manufactured by dimensioning the structures.

The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming Si.sub.xO.sub.y.sub.z; wherein a is any one of F, Cl, H, and C.sub.kH.sub.l; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.