A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

Devices, systems and techniques are described for producing and implementing articles and materials having nano-scale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography.

A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.

Disclosed is a method of manufacturing a device (1) comprising a plurality of micro-machined ultrasonic transducer cells (100) in a first region (10) on a substrate (30) and a plurality of interconnects (200) in a second region (20) on said substrate, each of said cells comprising a first electrode (110) separated by a cavity (130) from a second electrode (120) supported by a membrane (140), the method comprising forming a dielectric layer stack (11, 13, 15, 17) over the substrate, said dielectric layer stack defining the respective membranes of the micro-machined ultrasonic transducers in the first region; reducing the thickness of the dielectric layer stack in the second region by partially etching away the dielectric layer stack in the second region; etching a plurality of trenches (22) in the reduced thickness portion of the dielectric layer stack, each of said trenches exposing a conductive contact (210) in the second region; and filling said trenches with a conductive material. A device manufactured in accordance with this method and an apparatus including the device are also disclosed.

Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.

Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

A laser micro/nano processing system (100, 200, 300, 400) comprises: a laser light source used to provide a first laser beam having a first wavelength and a second laser beam having a second wavelength different from the first wavelength, with the pulse width of the first laser beam being in the range from a nanosecond to a femtosecond; an optical focusing assembly used to focus the first laser beam and the second laser beam to the same focal point; and a micro mobile platform (21) controlled by a computer. Also disclosed are a method for micro/nano-processing photosensitive materials with a laser and a method for fabricating a device with a micro/nano structure using laser two-photon direct writing technology. In the system and methods, spatial and temporal overlapping of two laser beams is utilized, so as to obtain a micro/nano structure with a processing resolution higher than that of a single laser beam, using an average power lower than that of a single laser beam.

Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

Disclosed is a method of manufacturing a device (1) comprising a plurality of micro-machined ultrasonic transducer cells (100) in a first region (10) on a substrate (30) and a plurality of interconnects (200) in a second region (20) on said substrate, each of said cells comprising a first electrode (100) separated by a cavity (130) from a second electrode (120) supported by a membrane (140), the method comprising forming a dielectric layer stack (11, 13, 15, 17) over the substrate, said dielectric layer stack defining the respective membranes of the micro-machined ultrasonic transducers in the first region; reducing the thickness of the dielectric layer stack in the second region by partially etching away the dielectric layer stack in the second region; etching a plurality of trenches (22) in the reduced thickness portion of the dielectric layer stack, each of said trenches exposing a conductive contact (210) in the second region; and filling said trenches with a conductive material. A device manufactured in accordance with this method and an apparatus including the device are also disclosed.

The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.