A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.

In an example, a method includes depositing an organic polymer layer on one or more material layers. The method also includes thermally curing the organic polymer layer. The method includes depositing a hard mask on the organic polymer layer and depositing a photoresist layer on the hard mask. The method also includes patterning the photoresist layer to expose at least a portion of the hard mask. The method includes etching the exposed portion of the hard mask to expose at least a portion of the organic polymer layer. The method also includes etching the exposed portion of the organic polymer layer to expose at least a portion of the one or more material layers.

A method is described for producing a microfluidic device (19), which comprises the phases of producing a three-dimensional template (15) of geometry equal to the channelings that is desired to obtain in the device; inserting the template in the desired position into a mold (16), keeping it suspended by at least one of its end; coating said template by immersion in (or deposition of) a material in the liquid phase (or dissolved or dispersed in a solvent) capable of solidifying by means of a chemical reaction or physical transformation, forming a material constituting the body of the final device; and selectively removing the three-dimensional template. In a variant of the method, useful for the production of scaffolds to be inserted into the human body, a porogenic material is added to the liquid precursor or to the precursor solution, such that the material of the solid matrix is characterized by a continuous structure of pores into which it is possible to insert live cells.

A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

In an example, a MEMS device includes an anti-reflective coating layer formed on a substrate of the MEMS device. The device includes a hinge formed on the substrate, where an edge of the hinge on the substrate is aligned with an edge of the anti-reflective coating layer. The device includes a mirror coupled to the hinge.

An approximate S-shape is formed in a non-sensing portion of a micro-electromechanical systems (MEMS) microphone. For example, a piezo-electric layer, in a semiconductor stack forming the non-sensing portion, may have a lower portion at a first point that is at least 1 micrometer (m) below the lower portion at a second point. The approximately S-shape reinforces a piezo-membrane including the non-sensing portion and results in mismatch between petals of the piezo-membrane remaining closer to zero (e.g., within 6 m). As a result, fewer incoming sound waves leak through a gap between petals of the piezo-membrane, and performance of the MEMS microphone is increased. Additionally, the gap between the petals is less likely to allow dust and other small particles to enter the MEMS microphone, which further improves performance of the MEMS microphone.

In a micro-electromechanical system (MEMS) structure, at least one chemical stop structure is formed to reduce inadvertent etching of adhesion layers. A first adhesion layer and a second adhesion layer are separated by a primary dielectric layer. The primary dielectric layer includes a recess that forms a stair. The second adhesion layer includes an annular opening, and a protective material covers the sides of the second adhesion layer in the annular opening. A base plate layer covers the second adhesion layer and fills the recess and the annular opening. An annular via passes through the base plate layer and the protective material down to the primary dielectric layer. The protective material and the base plate layer each act as chemical stop structures that separate the first adhesion layer from the second adhesion layer.

A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.