The invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), producing at least one modification (10) within the donor substrate (2) by means of at least one LASER beam (12), wherein the LASER beam (12) penetrates the donor substrate (2) via a planar surface (16) of the donor substrate (2), wherein the LASER beam (12) is inclined with respect to the planar surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0? or 180? relative to the longitudinal axis of the donor substrate, wherein the LASER beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solid-body slice (1) detaches from the donor substrate (2) as a result of the modifications (10) produced or a stress-inducing layer (14) is produced or arranged on the planar surface (16) of the donor substrate (2) and mechanical stresses are produced in the donor substrate (2) by a thermal treatment of the stress-inducing layer (14), wherein the mechanical stresses produce a crack (20) for separating a solid-body layer (1), which crack propagates along the modifications (10).

A method of manufacturing a Fabry-Perot interference filter includes a forming step of forming a first thinned region, a first mirror layer, a sacrificial layer, and a second mirror layer are formed on a first main surface of a wafer, and the first thinned region in which at least one of the first mirror layer, the sacrificial layer, and the second mirror layer is partially thinned along each of a plurality of lines is formed; a cutting step of cutting the wafer into a plurality of substrates along each of the plurality of lines by forming a modified region within the wafer along each of the plurality of lines through irradiation of a laser light, after the forming step; and a removing step of removing a portion from the sacrificial layer through etching, between the forming step and the cutting step or after the cutting step.

A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices may include one or more of chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90? relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

Methods for fabricating three-dimensional microstructures are provided. The method includes disposing a reflow material on a mold, heating the reflow material, and creating a pressure gradient across the reflow material to reflow the material towards a bottom surface of the mold. The mold includes a molding region, a boundary region, and a thermal-isolating region disposed therebetween. The molding region includes a cavity and a projection projecting upwards from a bottom surface of the cavity. The thermal-isolating region includes at least one pocket formed adjacent to and along a perimeter of the cavity of the molding region. During heating, the temperature of the molding region is higher than that of the boundary region and the thermal-isolating region controls the thermal conductivity and mass therebetween. The material reflows towards the bottom surface of the cavity and the protrusion helps shapes the reflow material to form a substantially symmetrical three-dimensional microstructure.

Processes for shaping one- and two-dimensional nanomaterials, and thereby inducing local strains therein preferably to control one or more of their material properties. The processes include providing a substrate comprising a three-dimensional surface feature thereon, locating a nanomaterial on the substrate and over the surface feature, and directing a laser beam toward the nanomaterial such that the nanomaterial experiences laser shock pressure sufficient to deform the nanomaterial to conform at least partially to the shape of the surface feature and adhere to the surface feature either directly or via an intermediate layer therebetween.

A method and apparatus for the etching of variable depth features in a substrate is described. Movement of the substrate relative to an etchant (e.g. into or out of the etchant) during the etching process is utilised to provide a varying etch time, and hence depth, across the substrate, and in various examples this is enabled without requiring a varying mask.

Processes for shaping one- and two-dimensional nanomaterials, and thereby inducing local strains therein preferably to control one or more of their material properties. The processes include providing a substrate comprising a three-dimensional surface feature thereon, locating a nanomaterial on the substrate and over the surface feature, and directing a laser beam toward the nanomaterial such that the nanomaterial experiences laser shock pressure sufficient to deform the nanomaterial to conform at least partially to the shape of the surface feature and adhere to the surface feature either directly or via an intermediate layer therebetween.

A two-dimensional optical deflector includes a first SOI structure and a second SOI structure. A height of a monocrystalline silicon support layer of the first SOI structure is smaller than a height of a monocrystalline silicon support layer of the second SOI structure. A mirror includes a monocrystalline silicon active layer of the first SOI structure. An inner frame, an inner piezoelectric actuator and an outer frame include a monocrystalline silicon active layer of the first SOI structure and the monocrystalline silicon active layer of the second SOI structure. An outer piezoelectric actuator includes the monocrystalline silicon active layer of the first SOI structure.

A method and apparatus for the etching of variable depth features in a substrate is described. Movement of the substrate relative to an etchant (e.g. into or out of the etchant) during the etching process is utilised to provide a varying etch time, and hence depth, across the substrate, and in various examples this is enabled without requiring a varying mask.