A method is disclosed. The method comprises fabricating a device layer on a top portion of a semiconductor wafer that comprises a substrate. The device layer comprises an active device. The method also comprises forming a trap rich layer at a top portion of a handle wafer. The forming comprises etching the top portion of the handle wafer to form a structure in the top portion of the handle wafer that configures the trap rich layer. The method also comprises bonding a top surface of the handle wafer to a top surface of the semiconductor wafer. The method also comprises removing a bottom substrate portion of the semiconductor wafer.

A capacitive pressure sensor is provided. The capacitive pressure sensor includes a substrate; and a first electrode formed in one surface of the substrate and vertical to the surface of the substrate. The capacitive pressure sensor also includes a second electrode with a portion facing the first sub-electrode, a portion facing the second sub-electrode and a portion formed in the other surface of the substrate. Further, the capacitive pressure sensor includes a first chamber between the first electrode and the second electrode and a second chamber formed in the second electrode. Further, the pressure sensor also includes a first sealing layer formed on the second electrode; and a second sealing layer formed on the other surface of the substrate.

A capacitive micromachined ultrasonic transducer including a lower electrode, an upper electrode, and a membrane attached to the upper electrode and positioned between the lower electrode and the upper electrode. Anchors are connect to the membrane and the lower electrode such that a cavity is defined between the lower electrode and the membrane. One or more posts are positioned within the cavity, the posts partially buried within the membrane and extending towards the lower electrode. A method of producing a capacitive micromachined ultrasonic transducer includes forming an oxide growth layer on a device layer of undoped silicon and removing portions of the oxide growth layer to form anchors extending beyond the outer surface of the device layer and posts partially buried within post holes in the device layer and extending beyond the outer surface of the device layer.

A method for creating a sensor includes generating in a housing a measurement cavity that is hermetically sealed, the measurement cavity is formed by an inside surface of a cover chip and an opposing top surface of a base chip. The inside surface has a membrane electrode and the top surface has a base electrode; the membrane electrode and the base electrode form a sensing capacitance. A first terminal contacts the membrane electrode and a second terminal contacts the base electrode. Each of the terminals is a horizontal metal layer that contacts a vertical metal layer of a vertical electrical connection through the housing. The horizontal metal layer and the vertical metal layer form a hermetically sealed contact. The method further includes forming a eutectic bond hermetically sealing the measurement cavity from an outside.

A wafer-level packaging structure, comprising a device wafer, a plurality of reference device regions, and a thickened intermediate layer wafer. The reference device regions are arranged on the device wafer and are configured to provide reference devices; the thickened intermediate layer wafer is arranged on the device wafer and comprises first sub-portions and second sub-portions which are connected to each other, each first sub-portion being arranged around a reference device; one reference device region is arranged in the area enclosed by a first sub-portion, and the orthographic projection of each second sub-portion on the device wafer covers a reference device region. Further provided are a sensor and a manufacturing method for the wafer-level packaging structure.

A microelectromechanical systems (MEMS) device including a substrate, a membrane layer and a plurality of patterned backplates is provided. The membrane layer is disposed on the substrate and has a plurality of corrugated structures. A top surface of the membrane layer has a rounded-corner feature, and a bottom surface of the membrane layer has a sharp-corner feature. The plurality of patterned backplates are disposed above the membrane layer. A manufacturing method of a MEMS device is also provided.

A microelectromechanical electrostatic actuator is provided that includes a first layer and a second layer, a first set of comb fingers in the first layer aligned with a second set of comb finger in the second layer. In this aspect, the x-direction width of the comb fingers of the first set is tapered along the vertical direction, such that an electrostatic force between comb fingers is increased by tapering to thereby lower a required actuation voltage.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A micromechanical hydrogen sensor switch creates a conducting channel between two electrical contacts in response to atmospheric H.sub.2 at or above a selected threshold. The switch uses 100 nW or less in standby mode, three orders of magnitude less than existing hydrogen sensors. The sensor converts mechanical stress caused by hydrogen absorption by palladium into movement of a cantilever structure. The switch provides automatic temperature and stress compensation, separate gates for providing bias to regulate H.sub.2 sensitivity, a heater-based reset mechanism, low contact adhesion, and reliable platinum-to-platinum metal contacts. The sensor detects hydrogen concentrations as low as 10 parts per million (ppm) in the atmosphere.

Methods, apparatuses and methods of manufacture are described for a MEMS electrostatic blade actuator with different configurations to allow for improvements to performance. The MEMS electrostatic blade actuator with different configurations can be used in a MEMS mirror to reduce mass or reduce operating voltage.