A microelectromechanical system includes a lower membrane including a plurality of troughs and crests arranged alternately, an upper membrane including a plurality of troughs and crests arranged alternately, and a spacer layer disposed between the lower membrane and the upper membrane. The spacer layer includes counter electrode walls and support walls made of nitride, the counter electrode walls being provided with conductive elements. Chambers are formed between the troughs of the lower membrane and the crest of the upper membrane and the counter electrode walls are suspended in the chambers respectively. The support walls are sandwiched between the crests of the lower membrane and the troughs of the upper membrane with a space formed between adjacent support walls. The spaces between adjacent support walls may be empty or filled with oxide. Unwanted capacitance between the upper and lower membranes is reduced significantly.

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A micromechanical component for a sensor or microphone device. An electrode surface of a first electrode structure is aligned with a second electrode structure. A substructure of the first electrode structure is entirely made of at least one electrically conductive material. The electrode surface and an opposite surface of the first electrode structure are outer surfaces of the substructure. A stop structure protruding from the electrode surface towards the second electrode structure is formed on the first electrode structure. The first electrode structure includes an insulating region which extends from the electrode surface to the opposite surface of the first electrode structure. The stop structure is formed either as a projection of the at least one insulating region protruding from the electrode surface towards the second electrode structure or is bordered by the at least one insulating region.

A micromechanical component for a sensor device, including a seismic mass, which is situated at and/or in a mounting and which includes a first electrode area, a second electrode area electrically insulated from the first electrode area, and a connecting area made up of at least one electrically insulating material. The first electrode area and the second electrode area each mechanically contact the connecting area and are connected to one another via the connecting area. At least one first conductive area of the first electrode area and a second conductive area of the second electrode area are structured out of a first semiconductor and/or metal layer. The first electrode area also includes a third conductive area. The second electrode area also includes a fourth conductive area. The third conductive area and the fourth conductive area are structured out of a second semiconductor and/or metal layer.

A microelectromechanical structure, including a functional element situated in a cavity of the microelectromechanical structure. The functional element includes an aluminum nitride layer. The cavity is closed by a cap layer. The cap layer includes epitaxial silicon. A method for manufacturing a micromechanical structure is also described.

A capacitive transducer or microphone includes a first substrate of one or more layers and which includes a first surface, a first cavity in the first surface, and a mesa diaphragm that spans the first cavity. The capacitive transducer or microphone includes a second substrate fixed to the first substrate. The second substrate has one or more layers which includes a second cavity having a nonplanar (e.g., contoured or structured or stepped) bottom surface that faces the mesa diaphragm. A shape or relief of the bottom surface of the cavity may advantageously be, to at least some degree, complementary to a deformed shape of the diaphragm. The second substrate may include one or more acoustic holes, non-uniformly distributed thereacross. One or more vents may vent the second cavity.

A microelectromechanical (MEMS) sensor, such as an accelerometer, has one more proof masses that respond to movement of the sensor, the movement of which is measured based on a distance between the one or more proof masses and on one or more sense electrodes. The accelerometer also has a plurality of auxiliary electrodes and a signal generator configured to apply an auxiliary signal having a first harmonic frequency to the plurality of auxiliary electrodes. Circuitry receives a sensed signal from the plurality of sense electrodes and identifies a portion of the sensed signal having the first harmonic frequency. Based on this identified portion of the sensed signal, the circuitry determines whether a residual voltage is present on the one or more proof masses or on the one or more sense electrodes, and the circuitry modifies the operation of the accelerometer when the residual voltage is determined to be present in order to compensate for the residual voltage.

An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.