B81C1/00698

Method of manufacturing MEMS switches with reduced voltage

An approach includes a method of fabricating a switch. The approach includes forming a first fixed electrode and a second fixed electrode, forming a first cantilevered electrode aligned vertically over the first fixed electrode and the second fixed electrode, and operable to directly contact the second fixed electrode upon an application of a voltage to the first fixed electrode, forming a second cantilevered electrode aligned vertically over the second fixed electrode, and which has an end that overlaps the first cantilevered electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

METHOD OF MANUFACTURING A SWITCH
20170294274 · 2017-10-12 ·

MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

Metallizing MEMS devices
09758367 · 2017-09-12 · ·

Various embodiments produce a semiconductor device, such a MEMS device, having metallized structures formed by replacing a semiconductor structure with a metal structure. Some embodiments expose a semiconductor structure to one or more a reacting gasses, such as gasses including tungsten or molybdenum.

Multi-faced component-based electromechanical device

An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.

Multi-faced component-based electromechanical device

An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.

Metallizing MEMS Devices
20170166439 · 2017-06-15 ·

Various embodiments produce a semiconductor device, such a MEMS device, having metallized structures formed by replacing a semiconductor structure with a metal structure. Some embodiments expose a semiconductor structure to one or more a reacting gasses, such as gasses including tungsten or molybdenum.

MEMS SENSOR WITH COMPENSATION OF RESIDUAL VOLTAGE

A microelectromechanical (MEMS) sensor, such as an accelerometer, has one more proof masses that respond to movement of the sensor, the movement of which is measured based on a distance between the one or more proof masses and on one or more sense electrodes. The accelerometer also has a plurality of auxiliary electrodes and a signal generator configured to apply an auxiliary signal having a first harmonic frequency to the plurality of auxiliary electrodes. Circuitry receives a sensed signal from the plurality of sense electrodes and identifies a portion of the sensed signal having the first harmonic frequency. Based on this identified portion of the sensed signal, the circuitry determines whether a residual voltage is present on the one or more proof masses or on the one or more sense electrodes, and the circuitry modifies the operation of the accelerometer when the residual voltage is determined to be present in order to compensate for the residual voltage.

MECHANICAL RESONATOR WITH A SPRING-MASS SYSTEM COMPRISING A PHASE-CHANGE MATERIAL
20170163239 · 2017-06-08 ·

A mechanical resonator includes a spring-mass system, wherein the spring-mass system comprises a phase-change material. The mechanical resonator typically comprises an electrical circuit portion, coupled to the phase-change material to alter a phase configuration within the phase-change material. Methods of operation are also disclosed.

MEMS microphone with dual-back plate and method of manufacturing the same

Disclosed herein are a microelectromechanical systems (MEMS) microphone with a dual-back plate, and a method of manufacturing the same. The MEMS microphone according to an exemplary embodiment of the present invention includes: a substrate having a first back plate formed at a central portion thereof; a membrane plate disposed on first support parts formed at both sides on the substrate and vibrated depending on external sound pressure; and a second back plate disposed on second support parts formed at both sides of the membrane plate.

MEMS device with constant capacitance

A MEMS apparatus has a substrate, an input node, an output node, and a MEMS switch between the input node and the output node. The switch selectively connects the input node and the output node, which are electrically isolated when the switch is open. The apparatus also has an input doped region in the substrate and an output doped region in the substrate. The input doped region and output doped region are electrically isolated through the substratei.e., the resistance between them inhibits non-negligible current flows between the two doped regions. The input doped region forms an input capacitance with the input node, while the output doped region forms an output capacitance with the output node.