A method of fabricating a semiconductor structure includes: providing a first wafer, providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer; wherein the plurality of scribe lines protrudes from a third surface of the second wafer, and the third surface is between the first surface and the second surface.

A semiconductor device includes a substrate structure. The substrate structure includes a protruding engagement member having an inner periphery defining a groove and an outer periphery, an oxide layer on the protruding engagement member, and a bonding material layer on the oxide layer. The semiconductor device also includes a micro-electromechanical system (MEMS) substrate having a bonging pad. The bonding pad of the MEMS substrate is bonded to the bonding material layer of the substrate structure.

A protective cover member includes a laminate including: a protective membrane having a shape configured to cover an opening when the protective cover member is placed on the face of an object; a substrate film joined to the protective membrane; and a first adhesive layer configured to fix the protective cover member to the face, wherein an outer peripheral surface of the protective cover member has a step in a laminating direction of the laminate, a first portion of the protective cover member protrudes at the step more outward than a second portion of the protective cover member does when the protective cover member is placed on the face, the first portion being positioned farther from the face than the step, the second portion being positioned closer to the face than the step, and the protective membrane and the substrate film are positioned in the first portion.

A semiconductor manufacturing method includes providing a wafer. A layer is formed over a surface of the wafer where the layer is able to form a eutectic layer with a conductive element. The layer is partially removed so as to form a plurality of mesas. The wafer is bonded to a substrate through the plurality of mesas. The substrate is thinned down to a thickness so as to be less than a predetermined value.

A method includes placing a microelectromechanical system (MEMS) device over a carrier, wire bonding the MEMS device to a bond pad on the carrier with a bond wire, and spray coating a buffer layer over the MEMS device and enclosing the bond wire. A Young's modulus value of the buffer layer is less than a Young's modulus value of the MEMS device.

A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

A method includes mounting a window substrate to a carrier tape. The window substrate has a window extending between an upper surface of the window substrate and a lower surface of the window substrate, the carrier tape sealing the window at the lower surface. Bond pads on an active surface of a MEMS die are flip chip mounted to terminals on the upper surface of the window substrate, a MEMS active area of the MEMS die being aligned with the window of the window substrate. A magnet is mounted to an inactive surface of the MEMS die.

A microelectromechanical membrane transducer includes: a supporting structure; a cavity formed in the supporting structure; a membrane coupled to the supporting structure so as to cover the cavity on one side; a cantilever damper, which is fixed to the supporting structure around the perimeter of the membrane and extends towards the inside of the membrane at a distance from the membrane; and a damper piezoelectric actuator set on the cantilever damper and configured so as to bend the cantilever damper towards the membrane in response to an electrical actuation signal.

A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.

The present disclosure describes techniques for altering the epoxy wettability of a surface of a MEMS device. Particularly applicable to flip-chip bonding arrangements in which a top surface of a MEMS device is adhered to a package substrate. A barrier region is provided on a top surface of the MEMs device, laterally outside a region which forms, or overlies, the backplate and/or the cavity in the transducer substrate. The barrier region comprises a plurality of discontinuities, e.g. dimples, which inhibit the flow of epoxy.